2SK2329S datasheet(5/10 Pages) HITACHI

Numer części	2SK2329S

Szczegółowy opis	Silicon N-Channel MOS FET

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Producent	HITACHI [Hitachi Semiconductor]

Strona internetowa	http://www.renesas.com/eng

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5 / 10 page

2SK2329(L), 2SK2329(S)

5

1.0

0.8

0.6

0.4

0.2

0

Gate to Source Voltage

V

(V)

GS

Drain to Source Saturation Voltage vs.

Gate to Source Voltage

24

6

8

10

Pulse Test

I

= 10 A

D

2 A

5 A

Drain Current

I

(A)

D

Static Drain to Source on State Resistance

vs. Drain Current

0.1 0.2

0.5

1

2

5

10 20

50 100

V

= 2.5 V

GS

4 V

Pulse Test

1

0.2

0.5

0.1

0.02

0.05

0.01

0.10

0.08

0.06

0.04

0.02

–40

0

40

80

120

160

Case Temperature

Tc

(°C)

0

Pulse Test

Static Drain to Source on State Resistance

vs. Temperature

I

= 2 A, 5 A, 10 A

D

V

= 4 V

GS

2.5 V

2 A, 5 A, 10 A

0.1

Drain Current I

(A)

D

Forward Transfer Admittance vs.

Drain Current

0.3

1

3

10

30

100

50

20

10

2

5

1

0.5

25 °C

Tc = –25 °C

75 °C

DS

V

= 10 V

Pulse Test

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2SK2329S Arkusz danych(PDF) 5 Page - Hitachi Semiconductor

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