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2SK2869 Arkusz danych(PDF) 3 Page - Hitachi Semiconductor |
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2SK2869 Arkusz danych(HTML) 3 Page - Hitachi Semiconductor |
3 / 10 page 2SK2869 3 Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test Conditions Drain to source breakdown voltage V (BR)DSS 60 ——V I D = 10mA, VGS = 0 Gate to source breakdown voltage V (BR)GSS ±20 ——V I G = ±100µA, VDS = 0 Gate to source leak current I GSS —— ±10 µAV GS = ±16V, VDS = 0 Zero gate voltege drain current I DSS —— 10 µAV DS = 60 V, VGS = 0 Gate to source cutoff voltage V GS(off) 1.5 — 2.5 V I D = 1mA, VDS = 10V Static drain to source on state R DS(on) — 0.033 0.045 Ω I D = 10A, VGS = 10V* 1 resistance R DS(on) — 0.055 0.07 Ω I D = 10A, VGS = 4V* 1 Forward transfer admittance |y fs|10 16 — S I D = 10A, VDS = 10V* 1 Input capacitance Ciss — 740 — pF V DS = 10V Output capacitance Coss — 380 — pF V GS = 0 Reverse transfer capacitance Crss — 140 — pF f = 1MHz Turn-on delay time t d(on) — 10 — ns I D = 10A, VGS = 10V Rise time t r — 110 — ns R L = 3Ω Turn-off delay time t d(off) — 105 — ns Fall time t f — 120 — ns Body to drain diode forward voltage V DF — 1.0 — V I F = 20A, VGS = 0 Body to drain diode reverse recovery time t rr —40— V I F = 20A, VGS = 0 diF/ dt = 50A/ µs Note: 1. Pulse test |
Podobny numer części - 2SK2869 |
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Podobny opis - 2SK2869 |
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