2SK3081 datasheet(3/9 Pages) HITACHI

Numer części	2SK3081

Szczegółowy opis	Silicon N Channel MOS FET High Speed Power Switching

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Producent	HITACHI [Hitachi Semiconductor]

Strona internetowa	http://www.renesas.com/eng

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2SK3081

3

Main Characteristics

100

75

50

25

0

50

100

150

200

0.1

0.3

1

3

10

30

100

Case Temperature

Tc (°C)

Power vs. Temperature Derating

Drain to Source Voltage

V

(V)

DS

Maximum Safe Operation Area

1000

300

100

30

10

1

0.3

0.1

3

Ta = 25°C

1 shot pulse

10 µs

100

µs

1 ms

PW

=

10

ms

DC

Operation

(Tc

=

25°C)

Operation in

this area is

limited by R DS(on)

100

80

60

40

20

0

24

68

10

100

80

60

40

20

0

2

468

10

4 V

V

= 2.5 V

GS

6 V

8 V

5 V

4.5 V

10 V

Tc = –25°C

25°C

75°C

Drain to Source Voltage

V

(V)

DS

Typical Output Characteristics

Gate to Source Voltage

V

(V)

GS

Typical Transfer Characteristics

3.5 V

3 V

V

= 10 V

Pulse Test

DS

Pulse Test

Podobny numer części - 2SK3081

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2SK3081 Arkusz danych(PDF) 3 Page - Hitachi Semiconductor

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Podobny numer części - 2SK3081

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