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2SK3160 Arkusz danych(PDF) 2 Page - Hitachi Semiconductor |
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2SK3160 Arkusz danych(HTML) 2 Page - Hitachi Semiconductor |
2 / 9 page 2SK3160 2 Absolute Maximum Ratings (Ta = 25 °C) Item Symbol Ratings Unit Drain to source voltage V DSS 200 V Gate to source voltage V GSS ±20 V Drain current I D 10 A Drain peak current I D(pulse) Note1 40 A Body-drain diode reverse drain current I DR 10 A Avalanche current I AP Note3 10 A Avalanche energy E AR Note3 6.6 mJ Channel dissipation Pch Note2 30 W Channel temperature Tch 150 °C Storage temperature Tstg –55 to +150 °C Note: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at Tc = 25 °C 3. Value at Tch = 25 °C, Rg ≥ 50 Ω Electrical Characteristics (Ta = 25 °C) Item Symbol Min Typ Max Unit Test Conditions Drain to source breakdown voltage V (BR)DSS 200 — — V I D = 10 mA, VGS = 0 Gate to source breakdown voltage V (BR)GSS ±20 ——V I G = ±100 µA, VDS = 0 Gate to source leak current I GSS —— ±10 µAV GS = ±16 V, VDS = 0 Zero gate voltege drain current I DSS ——10 µAV DS = 200 V, VGS = 0 Gate to source cutoff voltage V GS(off) 1.0 — 2.5 V I D = 1 mA, VDS = 10 V Static drain to source on state R DS(on) — 130 170 m Ω I D = 5 A, VGS = 10 V Note4 resistance R DS(on) — 150 190 m Ω I D = 5 A, VGS = 4 V Note4 Forward transfer admittance |y fs| 8 13 — S I D = 5 A, VDS = 10 V Note4 Input capacitance Ciss — 1100 — pF V DS = 10 V Output capacitance Coss — 365 — pF V GS = 0 Reverse transfer capacitance Crss — 185 — pF f = 1 MHz Turn-on delay time t d(on) — 15 — ns I D = 5 A, VGS = 10 V Rise time t r — 75 — ns R L = 6 Ω Turn-off delay time t d(off) — 280 — ns Fall time t f — 110 — ns Body–drain diode forward voltage V DF — 0.85 — V I F = 10 A, VGS = 0 Body–drain diode reverse recovery time t rr — 100 — ns I F = 10 A, VGS = 0 diF/ dt = 50 A/ µs Note: 4. Pulse test |
Podobny numer części - 2SK3160 |
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Podobny opis - 2SK3160 |
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