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MC-4R256CPE6C-653 Arkusz danych(PDF) 10 Page - NEC |
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MC-4R256CPE6C-653 Arkusz danych(HTML) 10 Page - NEC |
10 / 6 page Preliminary Data Sheet M14809EJ2V0DS00 10 MC-4R256CPE6C RIMM Module Current Profile IDD RIMM module power conditions Note1 MAX. Unit IDD1 One RDRAM in Read Note2, balance in NAP mode -845 753 mA -745 688 -653 603 IDD2 One RDRAM in Read Note2, balance in Standby mode -845 2,340 mA -745 2,200 -653 1,965 IDD3 One RDRAM in Read Note2, balance in Active mode -845 3,390 mA -745 3,100 -653 2,715 IDD4 One RDRAM in Write, balance in NAP mode -845 713 mA -745 658 -653 578 IDD5 One RDRAM in Write, balance in Standby mode -845 2,300 mA -745 2,170 -653 1,940 IDD6 One RDRAM in Write, balance in Active mode -845 3,350 mA -745 3,070 -653 2,690 Notes 1. Actual power will depend on individual RDRAM component specifications, memory controller and usage patterns. Power does not include Refresh Current. 2. I/O current is a function of the % of 1’s, to add I/O power for 50 % 1’s for a x16 need to add 257 mA for the following : VDD = 2.5 V, VTERM = 1.8 V, VREF = 1.4 V and VDIL = VREF − 0.5 V. |
Podobny numer części - MC-4R256CPE6C-653 |
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Podobny opis - MC-4R256CPE6C-653 |
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