TP0604N3-GP002 datasheet(2/5 Pages) SUTEX

Numer części	TP0604N3-GP002

Szczegółowy opis	P-Channel Enhancement-Mode Vertical DMOS FET

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Producent	SUTEX [Supertex, Inc]

Strona internetowa	http://www.supertex.com

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TP0604

Supertex inc.

www.supertex.com

Doc.# DSFP-TP0604

C082012

Electrical Characteristics (T

A = 25

O

C unless otherwise specified)

Sym

Parameter

Min

Typ

Max

Units Conditions

BV

DSS

Drain-to-source breakdown voltage

-40

-

V

GS = 0V, ID = -2.0mA

V

GS(th)

Gate threshold voltage

-1.0

-

-2.4

V

GS = VDS, ID= -1.0mA

ΔV

GS(th)

Change in V

GS(th) with temperature

-

-3.0

-4.5 mV/OC V

GS = VDS, ID= -1.0mA

I

GSS

Gate body leakage

-

-100

nA

V

GS = ± 20V, VDS = 0V

I

DSS

Zero gate voltage drain current

-

-10

µA

V

GS = 0V, VDS = Max Rating

-

-1.0

mA

V

DS = 0.8 Max Rating,

V

GS = 0V, TA = 125°C

I

D(ON)

ON-state drain current

-0.4

-0.6

-

A

V

GS = -5.0V, VDS = -20V

-2.0

-3.3

-

V

GS = -10V, VDS = -20V

R

DS(ON)

Static drain-to-source on-state resistance

-

2.0

3.5

Ω

V

GS = -5.0V, ID = -250mA

-

1.5

2.0

V

GS = -10V, ID = -1.0A

ΔR

DS(ON)

Change in R

DS(ON) with temperature

-

1.2

%/OC V

GS = -10V, ID = -1.0A

G

FS

Forward transductance

400

600

-

mmho V

DS = -20V, ID = -1.0A

C

ISS

Input capacitance

-

95

150

pF

V

GS = 0V,

V

DS = -20V,

f = 1.0MHz

C

OSS

Common source output capacitance

-

85

120

C

RSS

Reverse transfer capacitance

-

35

60

t

d(ON)

Turn-on delay time

-

5.0

8.0

ns

V

DD = -20V,

I

D = -1.0A,

R

GEN = 25Ω

t

r

Rise time

-

7.0

18

t

d(OFF)

Turn-off delay time

-

10

15

t

f

Fall time

-

6.0

19

V

SD

Diode forward voltage drop

-

-1.3

-2.0

V

GS = 0V, ISD = -1.5A

t

rr

Reverse recovery time

-

300

-

ns

V

GS = 0V, ISD = -1.5A

Notes:

1.

All D.C. parameters 100% tested at 25OC unless otherwise stated. (Pulsed test: 300µs pulse, 2% duty cycle.)

2.

All A.C. parameters sample tested.

Notes:

† I

D (continuous) is limited by max rated Tj .

Thermal Characteristics

Package

I

D

(continuous)†

(A)

I

D

(pulsed)

(A)

Power Dissipation

@T

A = 25

O

C

(W)

θ

ja

(OC/W)

I

DR

†

(A)

I

DRM

(A)

TO-92

-0.43

-4.2

0.74

132

-0.43

-4.2

Switching Waveforms and Test Circuit

90%

10%

90%

10%

Pulse

Generator

VDD

R

L

OUTPUT

D.U.T.

t

(ON)

t

d(ON)

t

(OFF)

t

d(OFF)

t

f

t

r

INPUT

R

GEN

INPUT

OUTPUT

0V

VDD

0V

-10V

Podobny numer części - TP0604N3-GP002

Producent	Numer części	Arkusz danych	Szczegółowy opis
Supertex, Inc	TP0604N3	480Kb / 4P	P-Channel Enhancement-Mode Vertical DMOS FETs
Microchip Technology	TP0604N3G	311Kb / 14P	P-Channel Enhancement-Mode Vertical DMOS FET 05/14/19

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Podobny opis - TP0604N3-GP002

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Diodes Incorporated	ZVP4424C	44Kb / 1P	P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET
	ZVP1320A	85Kb / 3P	P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET
	ZVP0540A	32Kb / 1P	P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET
	ZVN2110C	43Kb / 1P	P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET
Supertex, Inc	TP5335	396Kb / 3P	P-Channel Enhancement-Mode Vertical DMOS FET

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