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Zakładka z wyszukiwarką danych komponentów |
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Zakładka z wyszukiwarką danych komponentów |
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KSB1023TU Arkusz danych(PDF) 1 Page - Fairchild Semiconductor |
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KSB1023TU Arkusz danych(HTML) 1 Page - Fairchild Semiconductor |
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1 / 4 page  ©2000 Fairchild Semiconductor International Rev. A, February 2000 PNP Silicon Darlington Transistor Absolute Maximum Ratings T C=25°C unless otherwise noted Electrical Characteristics T C=25°C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage - 60 V VCEO Collector-Emitter Voltage - 40 V VEBO Emitter-Base Voltage - 5 V IC Collector Current (DC) - 3 A ICP Collector Current (Pulse) - 6 A IB Base Current - 0.3 A PC Collector Dissipation (Ta=25°C) 2 W PC Collector Dissipation (TC=25°C) 20 W TJ Junction Temperature 150 °C TSTG Storage Temperature - 55 ~ 150 °C Symbol Parameter Test Condition Min. Typ. Max. Units BVCEO Collector-Emitter Breakdown Voltage IC = - 25mA, IB = 0 - 40 V ICBO Collector Cut-off Current VCB = - 60V, IE = 0 - 20 µA IEBO Emitter Cut-off Current VEB = - 5V, IC = 0 - 2.5 mA hFE1 hFE2 DC Current Gain VCE = - 2V, IC = - 1A VCE = - 2V, IC = - 3A 2000 1000 VCE(sat) Collector-Emitter Saturation Voltage IC = - 2A, IB = - 4mA - 1.5 V VBE(sat) Base-Emitter Saturation Voltage IC = - 2A, IB = - 4mA - 2 V tON Turn ON Time VCC = - 30V, IC = - 3A IB1 = - IB2 = - 6mA RL = 10Ω 0.3 µs tSTG Storage Time 0.6 µs tF Fall Time 0.25 µs KSB1023 Power Amplifier Applications • High DC Current Gain • Low Collector-Emitter Saturation Voltage • Complement to KSD1413 1 1.Base 2.Collector 3.Emitter TO-220F |
Podobny numer części - KSB1023TU |
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Podobny opis - KSB1023TU |
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