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NEZ1011-2E Arkusz danych(PDF) 2 Page - NEC |
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NEZ1011-2E Arkusz danych(HTML) 2 Page - NEC |
2 / 12 page 2 NEZ1011-2E, NEZ1414-2E RECOMMENDED OPERATING LIMITS Characteristics Symbol Test Condition MIN. TYP. MAX. Unit Drain to Source Voltage VDS 9.0 9.0 9.0 V Gain Compression Gcomp 3 dB Channel Temperature Tch +130 °C Gate Resistance Note Rg 200 1000 1000 Ω Note Rg is the series resistance between the gate supply and the FET gate. [NEZ1011-2E] ELECTRICAL CHARACTERISTICS (TA = 25°C) Characteristics Symbol Test Conditions MIN. TYP. MAX. Unit Saturated Drain Current IDSS VDS = 1.5 V, VGS = 0 V 0.7 1.6 2.5 A Pinch-off Voltage Vp VDS = 2.5 V, IDS = 10 mA –2.5 –1.3 –0.5 V Gate to Drain Breakdown Voltage BVGD IGD = 10 mA 15 V Thermal Resistance Rth Channel to Case 5.5 7.0 °C/W Linear Gain GL 8.0 8.5 dB Output Power at 1 dB Gain Comp. Po (1 dB) 33.0 34.0 dBm Drain Current at 1 dB Gain Comp. IDS (1 dB) f = 10.7, 11.2, 11.7 GHz VDS = 9.0 V IDS = 0.7 A (RF OFF) Rg = 1 k Ω 0.8 1.0 A Power Added Efficiency at 1 dB Gain Compression Point η add (1 dB) 30 % 3rd Order Intermodulation Distortion IM3 Pout = +27.5 dBm (2 tone) –40 dBc [NEZ1414-2E] ELECTRICAL CHARACTERISTICS (TA = 25°C) Characteristics Symbol Test Conditions MIN. TYP. MAX. Unit Saturated Drain Current IDSS VDS = 1.5 V, VGS = 0 V 0.7 1.6 3.0 A Pinch-off Voltage Vp VDS = 2.5 V, IDS = 10 mA –3.0 –1.3 –0.5 V Gate to Drain Breakdown Voltage BVGD IGD = 10 mA 15 V Thermal Resistance Rth Channel to Case 5.5 7.0 °C/W Linear Gain GL 7.0 7.5 dB Output Power at 1 dB Gain Comp. Po (1 dB) 33.0 34.0 dBm Drain Current at 1 dB Gain Comp. IDS (1 dB) 0.8 1.0 A Power Added Efficiency at 1 dB Gain Compression Point η add (1 dB) f = 14.0 to 14.5 GHz VDS = 9.0 V IDS = 0.7 A (RF OFF) Rg = 1 k Ω 30 % |
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