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IRF66451PBF Arkusz danych(PDF) 2 Page - International Rectifier |
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IRF66451PBF Arkusz danych(HTML) 2 Page - International Rectifier |
2 / 9 page 2 www.irf.com © 2012 International Rectifier February 26, 2013 IRF6645/TRPbF S D G Electrical Characteristic @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units BVDSS Drain-to-Source Breakdown Voltage 100 ––– ––– V ΔΒVDSS/ΔTJ Breakdown Voltage Temp. Coefficient ––– 0.12 ––– V/°C RDS(on) Static Drain-to-Source On-Resistance ––– 28 35 m Ω VGS(th) Gate Threshold Voltage 3.0 ––– 4.9 V ΔVGS(th)/ΔTJ Gate Threshold Voltage Coefficient ––– -12 ––– mV/°C IDSS Drain-to-Source Leakage Current ––– ––– 20 μA ––– ––– 250 IGSS Gate-to-Source Forward Leakage ––– ––– 100 nA Gate-to-Source Reverse Leakage ––– ––– -100 gfs Forward Transconductance 7.4 ––– ––– S Qg Total Gate Charge ––– 14 20 Qgs1 Pre-Vth Gate-to-Source Charge ––– 3.1 ––– Qgs2 Post-Vth Gate-to-Source Charge ––– 0.8 ––– nC Qgd Gate-to-Drain Charge ––– 4.8 7.2 Qgodr Gate Charge Overdrive ––– 5.3 ––– See Fig. 15 Qsw Switch Charge (Qgs2 + Qgd) ––– 5.6 ––– Qoss Output Charge ––– 7.2 ––– nC RG Gate Resistance ––– 1.0 ––– Ω td(on) Turn-On Delay Time ––– 9.2 ––– tr Rise Time ––– 5.0 ––– td(off) Turn-Off Delay Time ––– 18 ––– ns tf Fall Time ––– 5.1 ––– Ciss Input Capacitance ––– 890 ––– Coss Output Capacitance ––– 180 ––– pF Crss Reverse Transfer Capacitance ––– 40 ––– Coss Output Capacitance ––– 870 ––– Coss Output Capacitance ––– 100 ––– Diode Characteristics Parameter Min. Typ. Max. Units IS Continuous Source Current ––– ––– 25 (Body Diode) A ISM Pulsed Source Current ––– ––– 45 (Body Diode) Ãg VSD Diode Forward Voltage ––– ––– 1.3 V trr Reverse Recovery Time ––– 31 47 ns Qrr Reverse Recovery Charge ––– 40 60 nC MOSFET symbol RG=6.2Ω VDS = 25V Conditions VGS = 0V, VDS = 80V, f=1.0MHz VGS = 0V, VDS = 1.0V, f=1.0MHz VDS = 16V, VGS = 0V VDD = 50V, VGS = 10VÃi VGS = 0V ƒ = 1.0MHz ID = 3.4A VDS = VGS, ID = 50μA VDS = 100V, VGS = 0V Conditions VGS = 0V, ID = 250μA Reference to 25°C, ID = 1mA VGS = 10V, ID = 5.7A i TJ = 25°C, IF = 3.4A, VDD = 50V di/dt = 100A/μs TJ = 25°C, IS = 3.4A, VGS = 0V i showing the integral reverse p-n junction diode. ID = 3.4A VDS = 80V, VGS = 0V, TJ = 125°C VGS = 20V VGS = -20V VGS = 10V VDS = 10V, ID = 3.4A VDS = 50V Notes:
Repetitive rating; pulse width limited by max. junction temperature. Pulse width ≤ 400μs; duty cycle ≤ 2%. |
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