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FQPF8N60C Arkusz danych(PDF) 1 Page - Fairchild Semiconductor

Numer części FQPF8N60C
Szczegółowy opis  600V N-Channel MOSFET
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Producent  FAIRCHILD [Fairchild Semiconductor]
Strona internetowa  http://www.fairchildsemi.com
Logo FAIRCHILD - Fairchild Semiconductor

FQPF8N60C Arkusz danych(HTML) 1 Page - Fairchild Semiconductor

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©2004 Fairchild Semiconductor Corporation
Rev. B, March 2004
QFET®
FQP8N60C/FQPF8N60C
600V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switched mode power supplies,
active power factor correction, electronic lamp ballasts
based on half bridge topology.
Features
• 7.5A, 600V, RDS(on) = 1.2Ω @VGS = 10 V
• Low gate charge ( typical 28 nC)
• Low Crss ( typical 12 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
Absolute Maximum Ratings T
C = 25°C unless otherwise noted
* Drain current limited by maximum junction temperature.
Thermal Characteristics
Symbol
Parameter
FQP8N60C
FQPF8N60C
Units
VDSS
Drain-Source Voltage
600
V
ID
Drain Current
- Continuous (TC = 25°C)
7.5
7.5 *
A
- Continuous (TC = 100°C)
4.6
4.6 *
A
IDM
Drain Current
- Pulsed
(Note 1)
30
30 *
A
VGSS
Gate-Source Voltage
± 30
V
EAS
Single Pulsed Avalanche Energy
(Note 2)
230
mJ
IAR
Avalanche Current
(Note 1)
7.5
A
EAR
Repetitive Avalanche Energy
(Note 1)
14.7
mJ
dv/dt
Peak Diode Recovery dv/dt
(Note 3)
4.5
V/ns
PD
Power Dissipation (TC = 25°C)
147
48
W
- Derate above 25°C
1.18
0.38
W/°C
TJ, TSTG
Operating and Storage Temperature Range
-55 to +150
°C
TL
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
300
°C
Symbol
Parameter
FQP8N60C
FQPF8N60C
Units
RθJC
Thermal Resistance, Junction-to-Case
0.85
2.6
°C/W
RθCS
Thermal Resistance, Case-to-Sink Typ.
0.5
--
°C/W
RθJA
Thermal Resistance, Junction-to-Ambient
62.5
62.5
°C/W
TO-220
FQP Series
G
S
D
TO-220F
FQPF Series
G
S
D
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