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ES3M Arkusz danych(PDF) 1 Page - MAKO SEMICONDUCTOR CO.,LIMITED |
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ES3M Arkusz danych(HTML) 1 Page - MAKO SEMICONDUCTOR CO.,LIMITED |
1 / 2 page 50V-1000V 3.0A ES3A THRU ES3M 1000 800 700 560 1000 800 M K J G D B A MAKO SEMICONDUCTOR 1 of 2 FEATURES MECHANICAL DATA MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Low cost Low leakage Low forward voltage drop High current capability Easily cleaned with Alcohol,Isopropanol and similar solvents The plastic material carries U/L recognition 94V-0 Case:JEDEC DO-214AA,molded plastic Terminals: Solderable per MIL- STD-202,Method 208 Polarity: Color band denotes cathode Weight: 0.007 ounces,0.21 grams Mounting position: Any SU R FA CE M O UNT R EC T IFIER Rating at 25℃ ambient temperature unless otherwise specified. Single phase, half wave ,60Hz, resistive or inductive load. For capacitive load, derate current by 20% CHARACTERISTICS SYMBOL ES3 ES3 ES3 ES3 ES3 UNIT Maximum Recurrent Peak Reverse Voltage VRRM 50 100 200 400 600 V Maximum RMS Voltage VRMS 35 70 140 280 420 V Maximum DC Blocking Voltage VDC 50 100 200 400 600 V Maximum Average Forward Rectified Current @TA=55 ℃ Peak Forward Surge Current 8.3ms Single Half Sine-Wave Super Imposed on Rated Load(JEDEC Method) Peak Forward Voltage at 3.0A DC VF 1.25 1.70 V Maximum DC Reverse Current @TJ=25℃ at Rated DC Blocking Voltage @TJ=100℃ Maximum Reverse Recovery Time(Note 1) TRR nS Typical Junction Capacitance (Note2) CJ pF Typical Thermal Resistance (Note3) R JA ℃ /W Operating Temperature Range TJ ℃ Storage Temperature Range TSTG ℃ 0.95 45 70 100 A 125 IFSM A I(AV) 3.0 2.Measured at 1.0 MHz and applied reverse voltage of 4.0V DC 3.Thermal resistance junction to ambient. NOTES: 1.Measured with IF=0.5A, IR=1A, IRR=0.25A -55 to +150 -55 to +150 μA IR 5.0 20 35 ES3 ES3 MAKO SEMICONDUCTOR.,CO.LTD |
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