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1N3768 Arkusz danych(PDF) 1 Page - GeneSiC Semiconductor, Inc. |
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1N3768 Arkusz danych(HTML) 1 Page - GeneSiC Semiconductor, Inc. |
1 / 3 page VRRM = 700 V - 1000 V IF = 35 A Features • High Surge Capability DO-5 Package • Not ESD Sensitive Note: 1. Standard polarity: Stud is cathode. 3. Stud is base. Parameter Symbol 1N3765 (R) 1N3766 (R) Unit Repetitive peak reverse voltage VRRM 700 800 V RMS reverse voltage VRMS 490 560 V DC blocking voltage VDC 700 800 V 2. Reverse polarity (R): Stud is anode. 1N3765 thru 1N3768R 1N3768 (R) 900 630 1N3767 (R) Maximum ratings, at Tj = 25 °C, unless otherwise specified • Types from 700 V to 1000 V VRRM Silicon Standard Recovery Diode Conditions 1000 700 1000 900 DC blocking voltage VDC 700 800 V Continuous forward current IF 35 35 A Operating temperature Tj -55 to 150 -55 to 150 °C Storage temperature Tstg -55 to 150 -55 to 150 °C Parameter Symbol 1N3765 (R) 1N3766 (R) Unit Diode forward voltage 1.2 1.2 10 10 μA 10 10 mA Thermal characteristics Thermal resistance, junction - case RthJC 0.25 0.25 °C/W 35 10 A 475 Reverse current IR VF 475 V Electrical characteristics, at Tj = 25 °C, unless otherwise specified VR = 50 V, Tj = 25 °C IF = 35 A, Tj = 25 °C TC ≤ 140 °C Conditions 475 475 -55 to 150 35 -55 to 150 1N3768 (R) 10 10 1N3767 (R) 0.25 VR = 50 V, Tj = 140 °C 0.25 1.2 1.2 10 -55 to 150 -55 to 150 TC = 25 °C, tp = 8.3 ms 1000 900 Surge non-repetitive forward current, Half Sine Wave IF,SM www.genesicsemi.com/silicon-products/standard-recovery-rectifiers/ 1 |
Podobny numer części - 1N3768 |
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Podobny opis - 1N3768 |
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