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2SD2015_2015 Arkusz danych(PDF) 2 Page - Quanzhou Jinmei Electronic Co.,Ltd. |
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2SD2015_2015 Arkusz danych(HTML) 2 Page - Quanzhou Jinmei Electronic Co.,Ltd. |
2 / 3 page Product Specification www.jmnic.com JMnic Silicon NPN Power Transistors 2SD2015 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO Collector-emitter breakdown voltage IC=10mA ;IB=0 120 V VCEsat Collector-emitter saturation voltage IC=2A ;IB=2mA 1.5 V VBEsat Base-emitter saturation voltage IC=2A ;IB=2mA 2.0 V ICBO Collector cut-off current VCB=150V; IE=0 10 μA IEBO Emitter cut-off current VEB=6V; IC=0 10 mA hFE DC current gain IC=2A ; VCE=2V 2000 fT Transition frequency IC=0.1A ; VCE=12V 40 MHz COB Collector output capacitance f=1MHz;VCB=10V 40 pF Switching times ton Turn-on time 0.6 μs ts Storage time 5.0 μs tf Fall time IC=2.0A IB1=-IB2=10mA VCC=40V ,RL=20Ω 2.0 μs |
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