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BAP50-04_2015 Arkusz danych(PDF) 4 Page - Quanzhou Jinmei Electronic Co.,Ltd. |
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BAP50-04_2015 Arkusz danych(HTML) 4 Page - Quanzhou Jinmei Electronic Co.,Ltd. |
4 / 8 page 1999 Dec 03 4 Philips Semiconductors Product specification General purpose PIN diode BAP50-04 GRAPHICAL DATA handbook, halfpage 103 10 102 1 MGS317 10−2 10−1 110 IF (mA) r D ( Ω) Fig.2 Forward resistance as a function of the forward current; typical values. f = 100 MHz; Tj =25 °C. handbook, halfpage 0 5 10 20 VR (V) Cd (fF) 600 0 200 400 15 MGL927 Fig.3 Diode capacitance as a function of reverse voltage; typical values. f = 1 MHz; Tj =25 °C. handbook, halfpage 0.5 3 f (GHz) |S21| 2 (dB) 0 −5 −4 MGS319 −3 −2 −1 1 (1) (2) (3) 1.5 2 2.5 Fig.4 Insertion loss ( |S21|2) of the diode in on-state as a function of frequency; typical values. (1) IF =10mA. (2) IF = 1 mA. (3) IF = 0.5 mA. Diode inserted in series with a 50 Ω stripline circuit and biased via the analyzer Tee network. Tamb =25 °C. handbook, halfpage 0.5 3 f (GHz) |S21| 2 (dB) 0 −25 −20 MGS320 −15 −10 −5 1 1.5 2 2.5 Fig.5 Isolation ( |S21|2) of the diode in off-state as a function of frequency; typical values. Diode zero biased and inserted in series with a 50 Ω stripline circuit. Tamb =25 °C. |
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