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BAP1321-04_2015 Arkusz danych(PDF) 4 Page - Quanzhou Jinmei Electronic Co.,Ltd. |
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BAP1321-04_2015 Arkusz danych(HTML) 4 Page - Quanzhou Jinmei Electronic Co.,Ltd. |
4 / 8 page 2001 Apr 17 4 Philips Semiconductors Product specification Silicon PIN diode BAP1321-04 GRAPHICAL DATA handbook, halfpage 10 1 10−1 MLD587 10−1 1 IF (mA) rD ( Ω) 10 102 Fig.2 Forward resistance as a function of forward current; typical values. f = 100 MHz; Tj =25 °C. handbook, halfpage 020 500 0 100 200 300 400 4 Cd (fF) VR (V) 812 16 MLD588 Fig.3 Diode capacitance as a function of reverse voltage; typical values. f = 1 MHz; Tj =25 °C. handbook, halfpage 01 f (GHz) 3 0 −0.2 −0.6 −0.8 −0.4 2 MLD589 s21 2 ( dB) (1) (2) (3) (4) Fig.4 Insertion loss ( |s21|2) of the diode as a function of frequency; typical values. (1) IF = 100 mA. (2) IF =10mA. (3) IF = 1 mA. (4) IF = 0.5 mA. Diode inserted in series with a 50 Ω stripline circuit and biased via the analyzer Tee network. Tamb =25 °C. handbook, halfpage 01 f (GHz) 3 0 −10 −30 −40 −20 2 MLD590 s21 2 ( dB) Fig.5 Isolation ( |s21|2) of the diode as a function of frequency; typical values. Diode zero biased and inserted in series with a 50 Ω stripline circuit. Tamb =25 °C. |
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