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BF1206_2015 Arkusz danych(PDF) 8 Page - Quanzhou Jinmei Electronic Co.,Ltd. |
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BF1206_2015 Arkusz danych(HTML) 8 Page - Quanzhou Jinmei Electronic Co.,Ltd. |
8 / 21 page 2003 Nov 17 8 Philips Semiconductors Product specification Dual N-channel dual-gate MOS-FET BF1206 handbook, halfpage 02 (1) (2) (3) (5) (7) 3 VGG = VDS (V) ID (mA) 8 40 0 32 6 24 16 8 MLE288 (4) (6) Fig.9 Drain current as a function of gate 1 (VGG) and drain supply voltage; typical values; amplifier a. VG2-S = 4 V; Tj =25 °C; RG1 = 150 kΩ (connected to VGG); see Fig.35. (1) RG1 =56kΩ. (2) RG1 =68kΩ. (3) RG1 =82kΩ. (4) RG1 =91kΩ. (5) RG1 = 100 kΩ. (6) RG1 = 120 kΩ. (7) RG1 = 150 kΩ. handbook, halfpage 02 VG2-S(V) ID (mA) 46 20 0 16 12 8 4 MLE292 (1) (4) (5) (3) (2) Fig.10 Drain current as a function of gate 2 voltage; typical values; amplifier a. VDS = 5 V; Tj =25 °C; RG1 =91kΩ (connected to VGG); see Fig.35. (1) VGG =5V. (2) VGG = 4.5 V. (3) VGG =4V. (4) VGG = 3.5 V. (5) VGG =3V. |
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