BF1206_2015 datasheet(8/21 Pages) JMNIC

Numer części	BF1206_2015

Szczegółowy opis	Dual N-channel dual-gate MOS-FET

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8 / 21 page

2003 Nov 17

8

Philips Semiconductors

Product speciﬁcation

Dual N-channel dual-gate MOS-FET

BF1206

handbook, halfpage

02

(1)

(2)

(3)

(5)

(7)

3

VGG = VDS (V)

ID

(mA)

8

40

0

32

6

24

16

8

MLE288

(4)

(6)

Fig.9

Drain current as a function of gate 1 (VGG)

and drain supply voltage; typical values;

amplifier a.

VG2-S = 4 V; Tj =25 °C; RG1 = 150 kΩ (connected to VGG); see Fig.35.

(1) RG1 =56kΩ.

(2) RG1 =68kΩ.

(3) RG1 =82kΩ.

(4) RG1 =91kΩ.

(5) RG1 = 100 kΩ.

(6) RG1 = 120 kΩ.

(7) RG1 = 150 kΩ.

handbook, halfpage

02

VG2-S(V)

ID

(mA)

46

20

0

16

12

8

4

MLE292

(1)

(4)

(5)

(3)

(2)

Fig.10 Drain current as a function of gate 2

voltage; typical values; amplifier a.

VDS = 5 V; Tj =25 °C; RG1 =91kΩ (connected to VGG); see Fig.35.

(1) VGG =5V.

(2) VGG = 4.5 V.

(3) VGG =4V.

(4) VGG = 3.5 V.

(5) VGG =3V.

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