BF1206_2015 datasheet(3/21 Pages) JMNIC

Numer części	BF1206_2015

Szczegółowy opis	Dual N-channel dual-gate MOS-FET

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2003 Nov 17

3

Philips Semiconductors

Product speciﬁcation

Dual N-channel dual-gate MOS-FET

BF1206

ORDERING INFORMATION

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 60134).

Note

1. Ts is the temperature at the soldering point of the source lead.

THERMAL CHARACTERISTICS

CAUTION

This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport

and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B.

TYPE NUMBER

PACKAGE

NAME

DESCRIPTION

VERSION

BF1206

−

plastic surface mounted package; 6 leads

SOT363

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

Per MOS-FET; unless otherwise speciﬁed

VDS

drain-source voltage

−

6V

ID

drain current (DC)

−

30

mA

IG1

gate 1 current

−±10

mA

IG2

gate 2 current

−±10

mA

Ptot

total power dissipation

Ts ≤ 107 °C; note 1

−

180

mW

Tstg

storage temperature

−65

+150

°C

Tj

junction temperature

−

150

°C

SYMBOL

PARAMETER

VALUE

UNIT

Rth j-s

thermal resistance from junction to soldering point

240

K/W

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