Zakładka z wyszukiwarką danych komponentów |
|
BF1210_2015 Arkusz danych(PDF) 10 Page - Quanzhou Jinmei Electronic Co.,Ltd. |
|
BF1210_2015 Arkusz danych(HTML) 10 Page - Quanzhou Jinmei Electronic Co.,Ltd. |
10 / 21 page BF1210_1 © NXP B.V. 2006. All rights reserved. Product data sheet Rev. 01 — 25 October 2006 10 of 21 NXP Semiconductors BF1210 Dual N-channel dual gate MOSFET VDS(A) =5V; VG2-S =4V; VDS(B) =0V; ID(A) = 19 mA. VDS(A) =5V; VG2-S =4V; VDS(B) =0V; ID(A) = 19 mA. Fig 13. Amplifier A: input admittance as a function of frequency; typical values Fig 14. Amplifier A: forward transfer admittance and phase as a function of frequency; typical values VDS(A) =5V; VG2-S =4V; VDS(B) =0V; ID(A) = 19 mA. VDS(A) =5V; VG2-S =4V; VDS(B) =0V; ID(A) = 19 mA. Fig 15. Amplifier A: reverse transfer admittance and phase as a function of frequency; typical values Fig 16. Amplifier A: output admittance as a function of frequency; typical values 001aaf487 f (MHz) 10 103 102 10−1 1 10 102 bis, gis (mS) 10−2 gis bis 001aaf488 f (MHz) 10 103 102 −10 −102 ϕfs (deg) −1 10 102 Yfs (mS) 1 Yfs ϕfs 001aaf489 −102 −10 −103 ϕrs (deg) 102 10 103 Yrs ( µS) 1 −1 f (MHz) 10 103 102 Yrs ϕrs 001aaf490 1 10-1 10 bos, gos (mS) 10-2 f (MHz) 10 103 102 bos gos |
Podobny numer części - BF1210_2015 |
|
Podobny opis - BF1210_2015 |
|
|
Link URL |
Polityka prywatności |
ALLDATASHEET.PL |
Czy Alldatasheet okazała się pomocna? [ DONATE ] |
O Alldatasheet | Reklama | Kontakt | Polityka prywatności | Linki | Lista producentów All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |