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BF1210_2015 Arkusz danych(PDF) 4 Page - Quanzhou Jinmei Electronic Co.,Ltd.

Numer części BF1210_2015
Szczegółowy opis  Dual N-channel dual gate MOSFET
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BF1210_1
© NXP B.V. 2006. All rights reserved.
Product data sheet
Rev. 01 — 25 October 2006
4 of 21
NXP Semiconductors
BF1210
Dual N-channel dual gate MOSFET
6.
Thermal characteristics
7.
Static characteristics
[1]
RG1 connects gate1 to VGG = 5 V. See Figure 32.
8.
Dynamic characteristics
8.1 Dynamic characteristics for amplifier A
Table 6.
Thermal characteristics
Symbol
Parameter
Conditions
Typ
Unit
Rth(j-sp)
thermal resistance from junction to solder point
240
K/W
Table 7.
Static characteristics
Tj =25 °C.
Symbol
Parameter
Conditions
Min
Typ Max Unit
Per MOSFET; unless otherwise specified
V(BR)DSS
drain-source breakdown voltage
VG1-S =VG2-S =0V; ID =10 µA
amplifier A
6
-
-
V
amplifier B
6
-
-
V
V(BR)G1-SS
gate1-source breakdown voltage
VG2-S =VDS =0V; IG1-S =10mA
6
-
10
V
V(BR)G2-SS
gate2-source breakdown voltage
VG1-S =VDS =0V; IG2-S =10mA
6
-
10
V
VF(S-G1)
forward source-gate1 voltage
VG2-S =VDS =0V; IS-G1 = 10 mA
0.5
-
1.5
V
VF(S-G2)
forward source-gate2 voltage
VG1-S =VDS =0V; IS-G2 = 10 mA
0.5
-
1.5
V
VG1-S(th)
gate1-source threshold voltage
VDS =5V; VG2-S =4V; ID = 100 µA
0.3
-
1.0
V
VG2-S(th)
gate2-source threshold voltage
VDS =5V; VG1-S =5V; ID = 100 µA
0.4
-
1.0
V
IDS
drain-source current
VG2-S =4V
[1]
amplifier A; VDS(A) =5V; RG1(A) =59kΩ
14
-
24
mA
amplifier B; VDS(B) =5V; RG1(B) = 150 kΩ
9
-
17
mA
IG1-S
gate1 cut-off current
VG2-S =0V; VDS(A) =VDS(B) =0V
amplifier A; VG1-S(A) =5V
-
-
50
nA
amplifier B; VG1-S(B) =5V
-
-
50
nA
IG2-S
gate2 cut-off current
VG2-S =4V; VDS(A) =VDS(B) =0V;
VG1-S(A) =VG1-S(B) =0V
-
-
20
nA
Table 8.
Dynamic characteristics for amplifier A
Common source; Tamb =25 °C; VG2-S =4V; VDS(A) =5V; ID(A) =19mA.
Symbol Parameter
Conditions
Min
Typ
Max
Unit
|yfs|
forward transfer admittance
Tj =25 °C26
31
41
mS
Ciss(G1)
input capacitance at gate1
f = 100 MHz
[1] -
2.2
2.7
pF
Ciss(G2)
input capacitance at gate2
f = 100 MHz
[1] -
3.0
-
pF
Coss
output capacitance
f = 100 MHz
[1] -
0.9
-
pF
Crss
reverse transfer capacitance f = 100 MHz
[1] -20
-
fF


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