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BF1210_2015 Arkusz danych(PDF) 4 Page - Quanzhou Jinmei Electronic Co.,Ltd. |
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BF1210_2015 Arkusz danych(HTML) 4 Page - Quanzhou Jinmei Electronic Co.,Ltd. |
4 / 21 page BF1210_1 © NXP B.V. 2006. All rights reserved. Product data sheet Rev. 01 — 25 October 2006 4 of 21 NXP Semiconductors BF1210 Dual N-channel dual gate MOSFET 6. Thermal characteristics 7. Static characteristics [1] RG1 connects gate1 to VGG = 5 V. See Figure 32. 8. Dynamic characteristics 8.1 Dynamic characteristics for amplifier A Table 6. Thermal characteristics Symbol Parameter Conditions Typ Unit Rth(j-sp) thermal resistance from junction to solder point 240 K/W Table 7. Static characteristics Tj =25 °C. Symbol Parameter Conditions Min Typ Max Unit Per MOSFET; unless otherwise specified V(BR)DSS drain-source breakdown voltage VG1-S =VG2-S =0V; ID =10 µA amplifier A 6 - - V amplifier B 6 - - V V(BR)G1-SS gate1-source breakdown voltage VG2-S =VDS =0V; IG1-S =10mA 6 - 10 V V(BR)G2-SS gate2-source breakdown voltage VG1-S =VDS =0V; IG2-S =10mA 6 - 10 V VF(S-G1) forward source-gate1 voltage VG2-S =VDS =0V; IS-G1 = 10 mA 0.5 - 1.5 V VF(S-G2) forward source-gate2 voltage VG1-S =VDS =0V; IS-G2 = 10 mA 0.5 - 1.5 V VG1-S(th) gate1-source threshold voltage VDS =5V; VG2-S =4V; ID = 100 µA 0.3 - 1.0 V VG2-S(th) gate2-source threshold voltage VDS =5V; VG1-S =5V; ID = 100 µA 0.4 - 1.0 V IDS drain-source current VG2-S =4V [1] amplifier A; VDS(A) =5V; RG1(A) =59kΩ 14 - 24 mA amplifier B; VDS(B) =5V; RG1(B) = 150 kΩ 9 - 17 mA IG1-S gate1 cut-off current VG2-S =0V; VDS(A) =VDS(B) =0V amplifier A; VG1-S(A) =5V - - 50 nA amplifier B; VG1-S(B) =5V - - 50 nA IG2-S gate2 cut-off current VG2-S =4V; VDS(A) =VDS(B) =0V; VG1-S(A) =VG1-S(B) =0V - - 20 nA Table 8. Dynamic characteristics for amplifier A Common source; Tamb =25 °C; VG2-S =4V; VDS(A) =5V; ID(A) =19mA. Symbol Parameter Conditions Min Typ Max Unit |yfs| forward transfer admittance Tj =25 °C26 31 41 mS Ciss(G1) input capacitance at gate1 f = 100 MHz [1] - 2.2 2.7 pF Ciss(G2) input capacitance at gate2 f = 100 MHz [1] - 3.0 - pF Coss output capacitance f = 100 MHz [1] - 0.9 - pF Crss reverse transfer capacitance f = 100 MHz [1] -20 - fF |
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