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IRF66121PBF Arkusz danych(PDF) 1 Page - International Rectifier

Numer części IRF66121PBF
Szczegółowy opis  RoHs Compliant
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Producent  IRF [International Rectifier]
Strona internetowa  http://www.irf.com
Logo IRF - International Rectifier

IRF66121PBF Arkusz danych(HTML) 1 Page - International Rectifier

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1
05/29/06
IRF6612PbF
IRF661TRPbF
Applicable DirectFET Package/Layout Pad (see p.8,9 for details)
PD - 97215
RoHs Compliant
Lead-Free (Qualified up to 260°C Reflow)
Application Specific MOSFETs
Ideal for CPU Core DC-DC Converters
Low Conduction Losses
High Cdv/dt Immunity
Low Profile (<0.7mm)
Dual Sided Cooling Compatible
Compatible with existing Surface Mount Techniques
Description
The IRF6612PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packag-
ing to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile. The
DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and
vapor phase, infra-red or convection soldering techniques. Application note AN-1035 is followed regarding the manufacturing
methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems,
improving previous best thermal resistance by 80%.
The IRF6612PbF balances industry leading on-state resistance while minimizing gate charge along with ultra low package
inductance to reduce both conduction and switching losses. The reduced losses make this product ideal for high frequency/
high efficiency DC-DC converters that power high current loads such as the latest generation of microprocessors. The
IRF6612PbF has been optimized for parameters that are critical in synchronous buck converter’s SyncFET sockets.
Fig 1. Typical On-Resistance vs. Gate-to-Source Voltage
Fig 2. Total Gate Charge vs. Gate-to-Source Voltage
Click on this section to link to the appropriate technical paper.
Click on this section to link to the DirectFET Website.
Surface mounted on 1 in. square Cu board, steady state.
TC measured with thermocouple mounted to top (Drain) of part.
Repetitive rating; pulse width limited by max. junction temperature.
Starting TJ = 25°C, L = 0.20mH, RG = 25Ω, IAS = 19A.
Notes:
DirectFET™ Power MOSFET
Typical values (unless otherwise specified)
DirectFET™ ISOMETRIC
MX
2
3
4
5
6
7
8
9
10
VGS, Gate -to -Source Voltage (V)
0
1
2
3
4
5
6
7
8
9
10
ID = 24A
TJ = 25°C
TJ = 125°C
0
10203040
QG Total Gate Charge (nC)
0.0
1.0
2.0
3.0
4.0
5.0
6.0
VDS= 24V
VDS= 15V
ID= 19A
Absolute Maximum Ratings
Parameter
Units
VDS
Drain-to-Source Voltage
V
VGS
Gate-to-Source Voltage
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V
ID @ TA = 25°C
Continuous Drain Current, VGS @ 10V
A
ID @ TA = 70°C
Continuous Drain Current, VGS @ 10V
IDM
Pulsed Drain Current
EAS
Single Pulse Avalanche Energy
mJ
IAR
Avalanche Current
A
37
19
Max.
24
19
190
±20
30
136
VDSS
VGS
RDS(on)
RDS(on)
30V max ±20V max 2.5m
Ω@ 10V 3.4mΩ@ 4.5V
Qg tot
Qgd
Qgs2
Qrr
Qoss Vgs(th)
30nC
10nC
2.9nC
8.1nC
18nC
1.8V
SQ
SX
ST
MQ
MX
MT


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