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SD215DE Arkusz danych(PDF) 2 Page - TEMIC Semiconductors |
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SD215DE Arkusz danych(HTML) 2 Page - TEMIC Semiconductors |
2 / 6 page SD211DE/SST211 Series 2 Siliconix S-51850—Rev. F, 14-Apr-97 Absolute Maximum Ratings (TA = 25 _C Unless Otherwise Noted) GateDrain, GateSource Voltage (SD211DE/SST211) -30/25 V (SD213DE/SST213) -15/25 V (SD215DE/SST215) -25/30 V GateSubstrate Voltagea (SD211DE/SST211) -0.3/25 V . . . . . . . . (SD213DE/SST213) -0.3/25 V . . . . . . . (SD215DE/SST215) -0.3/30 V . . . . . . . DrainSource Voltage (SD211DE/SST211) 30 V . . . . . . . . . . . . (SD213DE/SST213) 10 V . . . . . . . . . . . (SD215DE/SST215) 20 V . . . . . . . . . . . SourceDrain Voltage (SD211DE/SST211) 10 V . . . . . . . . . . . . (SD213DE/SST213) 10 V . . . . . . . . . . . (SD215DE/SST215) 20 V . . . . . . . . . . . DrainSubstrate Voltage (SD211DE/SST211) 30 V . . . . . . . . . . . . (SD213DE/SST213) 15 V . . . . . . . . . . . (SD215DE/SST215) 25 V . . . . . . . . . . . SourceSubstrate Voltage (SD211DE/SST211) 15 V . . . . . . . . . . . . (SD213DE/SST213) 15 V . . . . . . . . . . . (SD215DE/SST215) 25 V . . . . . . . . . . . Drain Current 50 mA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Lead Temperature (1/16” from case for 10 seconds) 300 _C . . . . . . . . . Storage Temperature –65 to 150 _C . . . . . . . . . . . . . . . . . . . . . . . . . . . Operating Junction Temperature –55 to 125 _C . . . . . . . . . . . . . . . . . . Power Dissipationa 300 mW . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Notes: a. Derate 3 mW/ _C above 25_C Specificationsa Limits 211 Series 213 Series 215 Series Parameter Symbolb Test Conditionsb Typc Min Max Min Max Min Max Unit Static Drain-Source Bkd V l V(BR)DS VGS = VBS = 0 V, ID = 10 mA 35 30 Breakdown Voltage V(BR)DS VGS = VBS = –5 V, ID = 10 nA 30 10 10 20 Source-Drain Breakdown Voltage V(BR)SD VGD = VBD = –5 V, IS = 10 nA 22 10 10 20 V Drain-Substrate Breakdown Voltage V(BR)DBO VGB = 0 V, ID = 10 nA, Source Open 35 15 15 25 V Source-Substrate Breakdown Voltage V(BR)SBO VGB = 0 V, IS = 10 mA, Drain Open 35 15 15 25 Drain-Source Lk IDS(off) VGS =VBS = –5V VDS = 10 V 0.4 10 10 Leakage IDS(off) VGS = VBS = –5 V VDS = 20 V 0.9 10 Source-Drain Lk ISD(off) VGD =VBD = –5V VSD = 10 V 0.5 10 10 nA Leakage ISD(off) VGD = VBD = –5 V VSD = 20 V 1 10 Gate Leakage IGBS VDB = VSB = 0 V, VGB = 30V 0.01 100 100 100 Threshold Voltage VGS(th) VDS = VGS, ID = 1 mA VSB = 0 V 0.8 0.5 1.5 0.1 1.5 0.1 1.5 V VGS = 5 V (SD Series) 58 70 70 70 W VGS = 5 V (SST Series) 60 75 75 75 W Drain-Source On Resistance rDS(on) VSB = 0 V ID = 1mA VGS = 10 V (SD Series) 38 45 45 45 W On-Resistance rDS(on) ID = 1 mA VGS = 10 V (SST Series) 40 50 50 50 W VGS = 15 V 30 VGS = 20 V 26 VGS = 25 V 24 |
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