Zakładka z wyszukiwarką danych komponentów
  Polish  ▼
ALLDATASHEET.PL

X  

SI5435BDC-T1-GE3 Arkusz danych(PDF) 2 Page - Vishay Siliconix

Numer części SI5435BDC-T1-GE3
Szczegółowy opis  P-Channel 30-V (D-S) MOSFET
Download  10 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
Producent  VISHAY [Vishay Siliconix]
Strona internetowa  http://www.vishay.com
Logo VISHAY - Vishay Siliconix

SI5435BDC-T1-GE3 Arkusz danych(HTML) 2 Page - Vishay Siliconix

  SI5435BDC-T1-GE3 Datasheet HTML 1Page - Vishay Siliconix SI5435BDC-T1-GE3 Datasheet HTML 2Page - Vishay Siliconix SI5435BDC-T1-GE3 Datasheet HTML 3Page - Vishay Siliconix SI5435BDC-T1-GE3 Datasheet HTML 4Page - Vishay Siliconix SI5435BDC-T1-GE3 Datasheet HTML 5Page - Vishay Siliconix SI5435BDC-T1-GE3 Datasheet HTML 6Page - Vishay Siliconix SI5435BDC-T1-GE3 Datasheet HTML 7Page - Vishay Siliconix SI5435BDC-T1-GE3 Datasheet HTML 8Page - Vishay Siliconix SI5435BDC-T1-GE3 Datasheet HTML 9Page - Vishay Siliconix Next Button
Zoom Inzoom in Zoom Outzoom out
 2 / 10 page
background image
www.vishay.com
2
Document Number: 73137
S09-0129-Rev. B, 02-Feb-09
Vishay Siliconix
Si5435BDC
Notes:
a. Pulse test; pulse width
≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Static
Gate Threshold Voltage
VGS(th)
VDS = VGS, ID = - 250 µA
- 1
- 3
V
Gate-Body Leakage
IGSS
VDS = 0 V, VGS = ± 20 V
± 100
nA
Zero Gate Voltage Drain Current
IDSS
VDS = - 30 V, VGS = 0 V
- 1
µA
VDS = - 30 V, VGS = 0 V, TJ = 85 °C
- 5
On-State Drain Currenta
ID(on)
VDS ≤ - 5 V, VGS = - 10 V
- 30
A
Drain-Source On-State Resistancea
RDS(on)
VGS = - 10 V, ID = - 4.3 A
0.035
0.045
Ω
VGS = - 4.5 V, ID = - 1.3 A
0.065
0.080
Forward Transconductancea
gfs
VDS = - 15 V, ID = - 4.3 A
14
S
Diode Forward Voltagea
VSD
IS = - 1.1 A, VGS = 0 V
- 0.8
- 1.2
V
Dynamicb
Total Gate Charge
Qg
VDS = - 15 V, VGS = - 10 V, ID = - 4.3 A
16
24
nC
Gate-Source Charge
Qgs
2.7
Gate-Drain Charge
Qgd
4.1
Gate Resistance
Rg
f = 1 MHz
8.5
Ω
Turn-On Delay Time
td(on)
VDD = - 15 V, RL = 15 Ω
ID ≅ - 1 A, VGEN = - 10 V, Rg = 6 Ω
815
ns
Rise Time
tr
12
20
Turn-Off Delay Time
td(off)
32
50
Fall Time
tf
20
30
Source-Drain Reverse Recovery Time
trr
IF = - 1.1 A, dI/dt = 100 A/µs
25
50
Output Characteristics
0
5
10
15
20
25
30
0
1234
5
VGS = 10 thru 6 V
3 V
VDS - Drain-to-Source Voltage (V)
4 V
5 V
Transfer Characteristics
0
5
10
15
20
25
30
0
123
456
TC = - 55 °C
25 °C
VGS - Gate-to-Source Voltage (V)
125 °C


Podobny numer części - SI5435BDC-T1-GE3

ProducentNumer częściArkusz danychSzczegółowy opis
logo
Vishay Siliconix
SI5435BDC-T1-E3 VISHAY-SI5435BDC-T1-E3 Datasheet
94Kb / 6P
   P-Channel 30-V (D-S) MOSFET
Rev. A, 18-Oct-04
More results

Podobny opis - SI5435BDC-T1-GE3

ProducentNumer częściArkusz danychSzczegółowy opis
logo
Vishay Siliconix
SI2341DS VISHAY-SI2341DS Datasheet
43Kb / 5P
   P-Channel 30-V (D-S) MOSFET
Rev. B, 11-Aug-03
SI4835BDY VISHAY-SI4835BDY_05 Datasheet
90Kb / 6P
   P-Channel 30-V (D-S) MOSFET
Rev. D, 25-Oct-0
logo
Anachip Corp
AF4407 ANACHIP-AF4407 Datasheet
263Kb / 5P
   P-Channel 30-V (D-S) MOSFET
logo
Vishay Siliconix
SI7423DN VISHAY-SI7423DN Datasheet
173Kb / 3P
   P-Channel 30-V (D-S) MOSFET
24-May-04
SI2303ADS VISHAY-SI2303ADS Datasheet
39Kb / 4P
   P-Channel, 30-V (D-S) MOSFET
Rev. B, 29-Apr-02
SI3481DV VISHAY-SI3481DV Datasheet
67Kb / 5P
   P-Channel 30-V (D-S) MOSFET
Rev. B, 16-Feb-04
logo
DinTek Semiconductor Co...
DTM4415 DINTEK-DTM4415 Datasheet
286Kb / 9P
   P-Channel 30-V (D-S) MOSFET
logo
Vishay Siliconix
SI4435DDY-T1-GE3 VISHAY-SI4435DDY-T1-GE3 Datasheet
279Kb / 10P
   P-Channel 30-V (D-S) MOSFET
Rev. C, 18-May-09
SI7121DN VISHAY-SI7121DN Datasheet
552Kb / 13P
   P-Channel 30-V (D-S) MOSFET
Rev. C, 23-Jun-08
SI4825DDY-T1 VISHAY-SI4825DDY-T1 Datasheet
242Kb / 10P
   P-Channel 30-V (D-S) MOSFET
Rev. A, 13-Oct-08
SI7129DN VISHAY-SI7129DN Datasheet
566Kb / 13P
   P-Channel 30 V (D-S) MOSFET
Rev. B, 06-Sep-10
More results


Html Pages

1 2 3 4 5 6 7 8 9 10


Arkusz danych Pobierz

Go To PDF Page


Link URL




Polityka prywatności
ALLDATASHEET.PL
Czy Alldatasheet okazała się pomocna?  [ DONATE ] 

O Alldatasheet   |   Reklama   |   Kontakt   |   Polityka prywatności   |   Linki   |   Lista producentów
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com