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2SA1411-M16 Arkusz danych(PDF) 1 Page - Guangdong Kexin Industrial Co.,Ltd |
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2SA1411-M16 Arkusz danych(HTML) 1 Page - Guangdong Kexin Industrial Co.,Ltd |
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1 / 1 page SMD Type IC www.kexin.com.cn 1 SMD Type Transistors Features Very high DC current gain:hFE=500 to 1600. High VEBO Voltage:VEBO=-10V Absolute Maximum Ratings Ta = 25 ti n U g n it a R l o b m y S r e t e m a r a P V e g a tl o v e s a b -r o t c e ll o C CBO -25 V V e g a tl o v r e tt i m e -r o t c e ll o C CEO -25 V V e g a tl o v e s a b -r e tt i m E EBO -10 V I t n e rr u c r o t c e ll o C C -150 mA Total power dissipation at 25 ambient temperature T e r u t a r e p m e t n o it c n u J j 150 T e r u t a r e p m e t e g a r o t S stg -55 to +150 PT 200 mW Electrical Characteristics Ta = 25 * PW 350us,duty cycle 2% PNP Transistors 2SA1411 ■ Classification of hfe Parameter Symbol Test Conditions Min Typ Max Unit Collector- base breakdown voltage VCBO Ic= -100 μA, IE=0 -25 Collector- emitter breakdown voltage VCEO Ic= -1 mA, IB=0 -25 Emitter - base breakdown voltage VEBO IE= -100μA, IC=0 -10 Collector-base cut-off current ICBO VCB= -25 V , IE=0 -0.1 Emitter cut-off current IEBO VEB= -7V , IC=0 -0.1 Collector-emitter saturation voltage * VCE(sat) IC=-50mA, IB=- 5mA -0.15 -0.3 Base - emitter saturation voltage * VBE(sat) IC=-50mA, IB=- 5mA -0.8 -1.2 Base - emitter saturation voltage * VBE VCE= -5V, IC= -1mA -580 mV VCE= -5V, IC= -1mA 500 1000 1600 VCE= -5V, IC= -100mA 200 400 Turn-on time ton 0.12 Storage time ts 0.58 Turn-off time toff 0.75 Output capacitance Cob VCB= -5V, IE= 0,f-1MHz 4.6 pF Transition frequency fT VCE= -5V, IE= -10mA 200 MHz DC current gain * hFE IC=-50mA,VBE(off)=2.7V, VCC=-10V ,IB1=IB2=-1mA V V us uA Type 2SA1411-M15 2SA1411-M16 Range 500-1000 800-1600 Marking M15 M16 0.4 +0.1 -0.1 2.9 +0.1 -0.1 0.95 +0.1 -0.1 1.9 +0.1 -0.1 1.Base 2.Emitter 3.collector 1 2 3 Unit: mm SOT-23 0.1 +0.05 -0.01 |
Podobny numer części - 2SA1411-M16 |
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Podobny opis - 2SA1411-M16 |
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