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2SA1411-M16 Arkusz danych(PDF) 1 Page - Guangdong Kexin Industrial Co.,Ltd

Numer części 2SA1411-M16
Szczegółowy opis  PNP Transistors
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Producent  KEXIN [Guangdong Kexin Industrial Co.,Ltd]
Strona internetowa  http://www.kexin.com.cn/index.asp
Logo KEXIN - Guangdong Kexin Industrial Co.,Ltd

2SA1411-M16 Arkusz danych(HTML) 1 Page - Guangdong Kexin Industrial Co.,Ltd

  2SA1411-M16 Datasheet HTML 1Page - Guangdong Kexin Industrial Co.,Ltd  
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SMD Type
IC
www.kexin.com.cn
1
SMD Type
Transistors
Features
Very high DC current gain:hFE=500 to 1600.
High VEBO Voltage:VEBO=-10V
Absolute Maximum Ratings Ta = 25
ti
n
U
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it
a
R
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b
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a
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c
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C
CBO
-25
V
V
e
g
a
tl
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v
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-r
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C
CEO
-25
V
V
e
g
a
tl
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v
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s
a
b
-r
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E
EBO
-10
V
I
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C
-150
mA
Total power dissipation
at 25 ambient temperature
T
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t
a
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e
p
m
e
t
n
o
it
c
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u
J
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150
T
e
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t
a
r
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p
m
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t
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g
a
r
o
t
S
stg
-55 to +150
PT
200
mW
Electrical Characteristics Ta = 25
* PW 350us,duty cycle 2%
PNP Transistors
2SA1411
Classification of hfe
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Collector- base breakdown voltage
VCBO
Ic= -100 μA, IE=0
-25
Collector- emitter breakdown voltage
VCEO
Ic= -1 mA, IB=0
-25
Emitter - base breakdown voltage
VEBO
IE= -100μA, IC=0
-10
Collector-base cut-off current
ICBO
VCB= -25 V , IE=0
-0.1
Emitter cut-off current
IEBO
VEB= -7V , IC=0
-0.1
Collector-emitter saturation voltage *
VCE(sat) IC=-50mA, IB=- 5mA
-0.15 -0.3
Base - emitter saturation voltage
*
VBE(sat) IC=-50mA, IB=- 5mA
-0.8
-1.2
Base - emitter saturation voltage
*
VBE
VCE= -5V, IC= -1mA
-580
mV
VCE= -5V, IC= -1mA
500
1000 1600
VCE= -5V, IC= -100mA
200
400
Turn-on time
ton
0.12
Storage time
ts
0.58
Turn-off time
toff
0.75
Output capacitance
Cob
VCB= -5V, IE= 0,f-1MHz
4.6
pF
Transition frequency
fT
VCE= -5V, IE= -10mA
200
MHz
DC current gain
*
hFE
IC=-50mA,VBE(off)=2.7V, VCC=-10V
,IB1=IB2=-1mA
V
V
us
uA
Type
2SA1411-M15
2SA1411-M16
Range
500-1000
800-1600
Marking
M15
M16
0.4 +0.1
-0.1
2.9 +0.1
-0.1
0.95 +0.1
-0.1
1.9 +0.1
-0.1
1.Base
2.Emitter
3.collector
1
2
3
Unit: mm
SOT-23
0.1 +0.05
-0.01


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