KTA1266-Y datasheet(1/2 Pages) KEXIN

Numer części	KTA1266-Y

Szczegółowy opis	PNP Transistors

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Producent	KEXIN [Guangdong Kexin Industrial Co.,Ltd]

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Transistors

PNP Transistors

KTA1266

■

Features

●

Excellent hFE Linearity

●

Low Noise

●

Complementary to KTC3198

0.60 Max

0.45 ± 0.1

4.8 ± 0.3

3.8 ± 0.3

0.5

1.27

2.54

1 2 3

TO-92

Unit:mm

1.Emitter

2.Collector

3.Base

■

Absolute Maximum Ratings Ta = 25℃

Parameter

Symbol

Rating

Unit

Collector - Base Voltage

VCBO

-50

Collector - Emitter Voltage

VCEO

-50

Emitter - Base Voltage

VEBO

-5

Collector Current - Continuous

IC

-150

mA

Collector Power Dissipation

PC

625

mW

Junction Temperature

TJ

150

Storage Temperature range

Tstg

-55 to 150

V

℃

■

Electrical Characteristics Ta = 25℃

Parameter

Symbol

Test Conditions

Min

Typ

Max

Unit

Collector- base breakdown voltage

VCBO

Ic= -100uA， IE=0

-50

Collector- emitter breakdown voltage

VCEO

Ic= -1 mA，IB=0

-50

Emitter - base breakdown voltage

VEBO

IE= -100 uA， IC=0

-5

Collector-base cut-off current

ICBO

VCB= -50V , IE=0

-0.1

Emitter cut-off current

IEBO

VEB= 5V , IC=0

-0.1

Collector-emitter saturation voltage

VCE(sat) IC=-100mA, IB=-10mA

-0.3

Base - emitter saturation voltage

VBE(sat) IC=-100mA, IB=-10mA

-1.1

hFE(1)

VCE= -6V, IC= -2mA

70

400

hFE(2)

VCE= -6V, IC= -150mA

25

Noise figure

NF

VCE=-6V, Ic=-0.1mA,

f=1KHZ, Rg=10KΩ

10

dB

Collector output capacitance

Cob

VCB= -10V, IE=0,f=1MHz

7

pF

Transition frequency

fT

VCE= -10V, IC= -1mA

80

MHz

DC current gain

V

uA

V

■

Classification of hfe(1)

Type

KTA1266-O

KTA1266-Y

KTA1266-G

Range

70-140

120-240

200-400

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