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2SA1580 Arkusz danych(PDF) 1 Page - Guangdong Kexin Industrial Co.,Ltd |
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2SA1580 Arkusz danych(HTML) 1 Page - Guangdong Kexin Industrial Co.,Ltd |
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1 / 1 page SMD Type IC www.kexin.com.cn 1 SMD Type Transistors Features High fT. Small reverse transfer capacitance. Adoption of FBET process. Absolute Maximum Ratings Ta = 25 ti n U g n it a R l o b m y S r e t e m a r a P V e g a tl o v e s a b -r o t c e ll o C CBO -70 V V e g a tl o v r e tt i m e -r o t c e ll o C CEO -60 V V e g a tl o v e s a b -r e tt i m E EBO -4 V I t n e rr u c r o t c e ll o C C -50 mA I ) e s l u p ( t n e rr u c r o t c e ll o C cp -100 mA P n o it a p i s s i d r o t c e ll o C C 200 mW T e r u t a r e p m e t n o it c n u J j 150 T e r u t a r e p m e t e g a r o t S stg -55 to +150 Electrical Characteristics Ta = 25 PNP Transistors 2SA1580 Parameter Symbol Test Conditions Min Typ Max Unit Collector- base breakdown voltage VCBO Ic= -100 μA, IE=0 -70 Collector- emitter breakdown voltage VCEO Ic= -1 mA,R BE= -60 Emitter - base breakdown voltage VEBO IE= -100μA, IC=0 -4 Collector-base cut-off current ICBO VCB= -40 V , IE=0 -0.1 Emitter cut-off current IEBO VEB= -3V , IC=0 -1 Collector-emitter saturation voltage VCE(sat) IC=-20mA, IB=- 2mA -0.6 Base - emitter saturation voltage VBE(sat) IC=-20mA, IB=- 2mA -1 DC current gain hFE VCE= -10, IC= -10mA 60 270 Base-collector time constant rbb,Cc VCE= -10V, IC= 10mA 8 ps Reverse transfer capacitance Cre VCB= -10V, f=1MHz 1.3 Output capacitance Cob VCB= -10V, f=1MHz 1.7 Transition frequency fT VCE= -6V, IE= 10mA 180 MHz V uA V pF ∞ ■ Classification of hfe ● Complementary to 2SC4104 0.4 +0.1 -0.1 2.9 +0.2 -0.1 0.95 +0.1 -0.1 1.9 +0.1 -0.2 1 2 3 Unit: mm SOT-23-3 1. Base 2. Emitter 3. Collector 0.15 +0.02 -0.02 Type 2SA1580-QL3 2SA1580-QL4 2SA1580-QL5 Range 60-120 90-180 135-270 Marking QL3 QL4 QL5 |
Podobny numer części - 2SA1580_15 |
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Podobny opis - 2SA1580_15 |
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