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2SD2150 Arkusz danych(PDF) 1 Page - Guangdong Kexin Industrial Co.,Ltd

Numer części 2SD2150
Szczegółowy opis  NPN Transistors
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Producent  KEXIN [Guangdong Kexin Industrial Co.,Ltd]
Strona internetowa  http://www.kexin.com.cn/index.asp
Logo KEXIN - Guangdong Kexin Industrial Co.,Ltd

2SD2150 Arkusz danych(HTML) 1 Page - Guangdong Kexin Industrial Co.,Ltd

  2SD2150_15 Datasheet HTML 1Page - Guangdong Kexin Industrial Co.,Ltd 2SD2150_15 Datasheet HTML 2Page - Guangdong Kexin Industrial Co.,Ltd  
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SMD Type
www.kexin.com.cn
1
Transistors
NPN Transistors
2SD2150
Features
Excellent current-to-gain characteristics
Low collector saturation voltage VCE(sat)
Complementary to 2SB1412
1.Base
2.Collector
3.Emitter
1.70 0.1
0.42 0.1
0.46 0.1
Absolute Maximum Ratings Ta = 25℃
Parameter
Symbol
Rating
Unit
Collector - Base Voltage
VCBO
40
Collector - Emitter Voltage
VCEO
20
Emitter - Base Voltage
VEBO
6
Collector Current - Continuous
IC
3
A
Collector Power Dissipation
PC
500
mW
Junction Temperature
TJ
150
Storage Temperature Range
Tstg
-55 to 150
V
Electrical Characteristics Ta = 25℃
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Collector- base breakdown voltage
VCBO
Ic= 100uA, IE= 0
40
Collector- emitter breakdown voltage
VCEO
Ic= 1 mA, IB= 0
20
Emitter - base breakdown voltage
VEBO
IE= 100u A, IC= 0
6
Collector-base cut-off current
ICBO
VCB= 35 V , IE= 0
0.1
Emitter cut-off current
IEBO
VEB= 5V , IC=0
0.1
Collector-emitter saturation voltage
VCE(sat) IC=2 A, IB=100mA
0.5
Base - emitter saturation voltage
VBE(sat) IC=2 A, IB=100mA
1.2
DC current gain
hFE
VCE= 2V, IC= 100mA
180
560
Collector output capacitance
Cob
VCB=10V, IE=0, f=1MHz
25
pF
Transition frequency
fT
VCE=2V,IC=500mA,f=100MHz
290
MHz
V
uA
V
Classification of hfe
Type
2SD2150-R
2SD2150-S
Range
180-390
270-560
Marking
CF R*
CF S*


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