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2SA1612-C18 Arkusz danych(PDF) 1 Page - Guangdong Kexin Industrial Co.,Ltd

Numer części 2SA1612-C18
Szczegółowy opis  PNP Transistors
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Producent  KEXIN [Guangdong Kexin Industrial Co.,Ltd]
Strona internetowa  http://www.kexin.com.cn/index.asp
Logo KEXIN - Guangdong Kexin Industrial Co.,Ltd

2SA1612-C18 Arkusz danych(HTML) 1 Page - Guangdong Kexin Industrial Co.,Ltd

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SMD Type
www.kexin.com.cn
1
Transistors
PNP Transistors
2SA1612
Features
High DC Current Gain
Complementary to 2SC4180
Absolute Maximum Ratings Ta = 25℃
Parameter
Symbol
Rating
Unit
Collector - Base Voltage
VCBO
-120
Collector - Emitter Voltage
VCEO
-120
Emitter - Base Voltage
VEBO
-5
Collector Current - Continuous
IC
-50
mA
Collector Power Dissipation
PC
150
mW
Junction Temperature
TJ
150
Storage Temperature range
Tstg
-55 to 150
V
Electrical Characteristics Ta = 25℃
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Collector- base breakdown voltage
VCBO
Ic= -100 μA, IE=0
-120
Collector- emitter breakdown voltage
VCEO
Ic= -1 mA,IB=0
-120
Emitter - base breakdown voltage
VEBO
IE= -100μA, IC=0
-5
Collector-base cut-off current
ICBO
VCB= -120 V , IE=0
-0.1
Emitter cut-off current
IEBO
VEB= -5V , IC=0
-0.1
Collector-emitter saturation voltage
VCE(sat) IC=-10 mA, IB=-1 mA
-0.09 -0.3
Base - emitter saturation voltage
VBE(sat) IC=-10 mA, IB=-1 mA
-1.2
Base - emitter voltage
VBE
VCE= -6V, IC= -1mA
-0.55 -0.61 -0.65
hFE(1)
VCE= -6V, IC= -0.1mA (Note.1)
100
500
hFE(2)
VCE= -6V, IC= -1mA
135
500
900
Collector output capacitance
Cob
VCB= -30V,IE=0, f=1MHz
2
3
pF
Transition frequency
fT
VCE= -6V, IC= -1mA
50
90
MHz
V
uA
V
DC current gain
Classification of hfe(2)
Type
2SA1612-C15
2SA1612-C16
2SA1612-C17
2SA1612-C18
Range
135-270
200-400
300-600
450-900
Marking
C15
C16
C17
C18
1.Base
2.Emitter
3.Collector


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