BCW61C datasheet(2/2 Pages) KEXIN

Numer części	BCW61C

Szczegółowy opis	PNP Transistors

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Transistors

PNP Transistors

BCW61 (KCW61)

■

Electrical Characteristics Ta = 25℃

Parameter

Symbol

Test Conditions

Min

Typ

Max

Unit

Collector- base breakdown voltage

VCBO

Ic= -100 μA， IE=0

-32

Collector- emitter breakdown voltage

VCEO

Ic= -1 mA， IB=0

-32

Emitter - base breakdown voltage

VEBO

IE= -100μA， IC=0

-5

Collector-base cut-off current

ICBO

VCB= -32 V , IE=0

-20

Emitter cut-off current

IEBO

VEB= -4V , IC=0

-20

IC=-10 mA, IB=-0.25mA

-60

-250

IC=-50 mA, IB=-1.25mA

-120

-550

IC=-10 mA, IB=-0.25mA

-0.6

-0.85

IC=-50 mA, IB=-1.25mA

-0.68

-1.05

Base - emitter voltage

VBE

VCE= -5V, IC= -2mA

-0.6

-0.75

DC current gain

BCW61B

30

BCW61C

40

BCW61D

100

DC current gain

BCW61A

120

220

BCW61B

180

310

BCW61C

250

460

BCW61D

380

630

DC current gain

BCW61A

60

BCW61B

80

BCW61C

100

BCW61D

110

Collector output capacitance

Cob

VCB= -10V,IE=0, f=1MHz

4.5

Collector input capacitance

Cib

VEB= -0.5V,IC=0, f=1MHz

11

Transition frequency

fT

VCE= -5V, IC= -10mA,f=100MHz

100

MHz

Collector-emitter saturation voltage

VCE(sat)

Base - emitter saturation voltage

VBE(sat)

hFE(1)

hFE(2)

VCE= -5V, IC= -10uA

VCE= -5V, IC= -2mA

V

nA

mV

V

hFE(3)

VCE= -1V, IC= -50mA

pF

■

Classification of hfe(2)

Type

BCW61A

BCW61B

BCW61C

BCW61D

Range

120-220

180-310

250-460

380-630

Marking

BA

BB

BC

BD

Podobny numer części - BCW61C

Producent	Numer części	Arkusz danych	Szczegółowy opis
NXP Semiconductors	BCW61C	42Kb / 8P	PNP general purpose transistors 1999 Apr 12
NXP Semiconductors	BCW61C	127Kb / 6P	PNP general purpose transistors 1999 Apr 12
Samsung semiconductor	BCW61C	33Kb / 1P	PNP EPITAXIAL SILICON TRANSISTOR
Infineon Technologies A...	BCW61C	169Kb / 11P	PNP Silicon AF Transistors 2007-10-18
Siemens Semiconductor G...	BCW61C	271Kb / 9P	PNP Silicon AF Transistors (For AF input stages and driver applications High current gain)

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Podobny opis - BCW61C

Producent	Numer części	Arkusz danych	Szczegółowy opis
NXP Semiconductors	PEMB10_PUMB10	626Kb / 15P	PNP/PNP resistor-equipped transistors; PNP/PNP resistor-equipped transistors; Rev. 3-3 January 2012
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Guangdong Kexin Industr...	2SB1026-HF	951Kb / 3P	PNP Transistors
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	2SB1027-HF	896Kb / 3P	PNP Transistors
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	2SB1115-HF	1Mb / 3P	PNP Transistors
	2SB1118	1Mb / 3P	PNP Transistors
	2SB1120	1Mb / 3P	PNP Transistors
	2SB1174	1Mb / 3P	PNP Transistors
	2SB1176	1Mb / 3P	PNP Transistors

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