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2SC2223-F14 Arkusz danych(PDF) 1 Page - Guangdong Kexin Industrial Co.,Ltd |
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2SC2223-F14 Arkusz danych(HTML) 1 Page - Guangdong Kexin Industrial Co.,Ltd |
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1 / 3 page  SMD Type www.kexin.com.cn 1 Transistors NPN Transistors 2SC2223 ■ Features ● Collector Current Capability IC=20mA ● Collector Emitter Voltage VCEO=20V ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO 30 Collector - Emitter Voltage VCEO 20 Emitter - Base Voltage VEBO 4 Collector Current - Continuous IC 20 mA Collector Power Dissipation PC 150 mW Junction Temperature TJ 125 Storage Temperature Range Tstg -55 to 125 V ℃ ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test Conditions Min Typ Max Unit Collector- base breakdown voltage VCBO Ic= 100 μA， IE= 0 30 Collector- emitter breakdown voltage VCEO Ic= 1 mA， IB= 0 20 Emitter - base breakdown voltage VEBO IE= 100μA， IC= 0 4 Collector-base cut-off current ICBO VCB= 25 V , IE= 0 100 Emitter cut-off current IEBO VEB= 3V , IC=0 100 Collector-emitter saturation voltage VCE(sat) IC=10 mA, IB=1mA 0.3 Base - emitter saturation voltage VBE(sat) IC=10 mA, IB=1mA 1.2 Base - emitter voltage VBE VCE= 6V, IC= 1mA 0.72 DC current gain hFE VCE= 6V, IC= 1mA 40 180 Noise Figure NF VCE= 6V, IE= -1mA,RG=50Ω,f=100MHz 3 dB Collector output capacitance Cob VCB= 6V, IE= 0,f=1MHz 1 pF Collector to base time constant Ccrb'b VCE= 6V, IE= -1mA,f=31.9MHz 12 pS Transition frequency fT VCE= 6V, IE= -1mA 400 600 MHz V nA V ■ Classification of hfe Type 2SC2223-F12 2SC2223-F13 2SC2223-F14 Range 40-80 60-120 90-180 Marking F12 F13 F14 0.4 +0.1 -0.1 2.9 +0.2 -0.1 0.95 +0.1 -0.1 1.9 +0.1 -0.2 1 2 3 Unit: mm SOT-23-3 1. Base 2. Emitter 3. Collector 0.15 +0.02 -0.02 |
Podobny numer części - 2SC2223-F14 |
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Podobny opis - 2SC2223-F14 |
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