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MTBA5C10V8 Arkusz danych(PDF) 2 Page - Cystech Electonics Corp. |
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MTBA5C10V8 Arkusz danych(HTML) 2 Page - Cystech Electonics Corp. |
2 / 13 page CYStech Electronics Corp. Spec. No. : C744V8 Issued Date : 2014.11.03 Revised Date : Page No. : 2/13 MTBA5C10V8 CYStek Product Specification Absolute Maximum Ratings (TC=25°C, unless otherwise noted) Limits Parameter Symbol N-channel P-channel Unit Drain-Source Breakdown Voltage BVDSS 100 -100 Gate-Source Voltage VGS ± 20 ± 20 V TA=25 °C, VGS=10V (-10V) 2.3 -1.7 Continuous Drain Current *2 TA=70 °C, VGS=10V (-10V) IDSM 1.8 -1.4 TC=25 °C, VGS=10V (-10V) 3.4 -2.6 Continuous Drain Current TC=100 °C, VGS=10V (-10V) ID 2.4 -1.8 Pulsed Drain Current * 3 IDM 10 -10 A Single device operation 1.5 *2 Single device value at dual operation PDSM 1.24 *2 TC=25°C 3.75 Total Power Dissipation TC=100°C PD * 1 1.88 W Operating Junction and Storage Temperature Range Tj; Tstg -55~+175 °C Thermal Data Parameter Symbol Value Unit Max. Thermal Resistance, Junction-to-ambient, single device operation 84 *2 Max. Thermal Resistance, Junction-to-ambient, single device value at dual operation Rth,j-a 101 *2 Max. Thermal Resistance, Junction-to-case Rth,j-c 40 °C/W Note : 1 .The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. 2 . The value of RθJA is measured with the device mounted on 1 in²FR-4 board with 2 oz. copper, in a still air environment with TA=25°C, t≤5s. 216°C/W when mounted on a minimum pad of 2 oz. copper. The power dissipation PDSM is based on RθJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user’s specific board design. 3. Pulse width limited by junction temperature TJ(MAX)=175°C. Ratings are based on low duty cycles to keep initial TJ=25°C. N-Channel Electrical Characteristics (Tc=25°C, unless otherwise specified) Symbol Min. Typ. Max. Unit Test Conditions Static BVDSS 100 - - VGS=0V, ID=250μA VGS(th) 1 - 2.5 V VDS=VGS, ID=250μA IGSS - - ±100 nA VGS=±20V, VDS=0V - - 1 VDS=100V, VGS=0V IDSS - - 10 μA VDS=100V, VGS=0V, Tj=70 °C - 126.5 155 VGS=10V, ID=2.3A *RDS(ON) - 130.0 175 m Ω VGS=5V, ID=2A *GFS - 7 - S VDS=5V, ID=2.3A Dynamic Ciss - 1221 - Coss - 31 - Crss - 22 - pF VDS=25V , VGS=0V, f=1MHz |
Podobny numer części - MTBA5C10V8 |
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Podobny opis - MTBA5C10V8 |
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