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MTBA5C10V8 Arkusz danych(PDF) 2 Page - Cystech Electonics Corp.

Numer części MTBA5C10V8
Szczegółowy opis  N- AND P-Channel Logic Level Enhancement Mode MOSFET
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Producent  CYSTEKEC [Cystech Electonics Corp.]
Strona internetowa  http://www.cystekec.com
Logo CYSTEKEC - Cystech Electonics Corp.

MTBA5C10V8 Arkusz danych(HTML) 2 Page - Cystech Electonics Corp.

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CYStech Electronics Corp.
Spec. No. : C744V8
Issued Date : 2014.11.03
Revised Date :
Page No. : 2/13
MTBA5C10V8
CYStek Product Specification
Absolute Maximum Ratings (TC=25°C, unless otherwise noted)
Limits
Parameter
Symbol
N-channel
P-channel
Unit
Drain-Source Breakdown Voltage
BVDSS
100
-100
Gate-Source Voltage
VGS
±
20
±
20
V
TA=25
°C, VGS=10V (-10V)
2.3
-1.7
Continuous Drain Current *2
TA=70
°C, VGS=10V (-10V)
IDSM
1.8
-1.4
TC=25
°C, VGS=10V (-10V)
3.4
-2.6
Continuous Drain Current
TC=100
°C, VGS=10V (-10V)
ID
2.4
-1.8
Pulsed Drain Current
* 3
IDM
10
-10
A
Single device operation
1.5 *2
Single device value at dual operation
PDSM
1.24 *2
TC=25°C
3.75
Total Power Dissipation
TC=100°C
PD * 1
1.88
W
Operating Junction and Storage Temperature Range
Tj; Tstg
-55~+175
°C
Thermal Data
Parameter
Symbol Value
Unit
Max. Thermal Resistance, Junction-to-ambient, single device operation
84 *2
Max. Thermal Resistance, Junction-to-ambient, single device value at dual operation
Rth,j-a
101 *2
Max. Thermal Resistance, Junction-to-case
Rth,j-c
40
°C/W
Note : 1
.The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful
in setting the upper dissipation limit for cases where additional heatsinking is used.
2
. The value of RθJA is measured with the device mounted on 1 in²FR-4 board with 2 oz. copper, in a still air
environment with TA=25°C, t≤5s. 216°C/W when mounted on a minimum pad of 2 oz. copper. The power dissipation
PDSM is based on RθJA and the maximum allowed junction temperature of 150°C. The value in any given application
depends on the user’s specific board design.
3. Pulse width limited by junction temperature TJ(MAX)=175°C. Ratings are based on low duty cycles to keep initial
TJ=25°C.
N-Channel Electrical Characteristics (Tc=25°C, unless otherwise specified)
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
Static
BVDSS
100
-
-
VGS=0V, ID=250μA
VGS(th)
1
-
2.5
V
VDS=VGS, ID=250μA
IGSS
-
-
±100
nA
VGS=±20V, VDS=0V
-
-
1
VDS=100V, VGS=0V
IDSS
-
-
10
μA
VDS=100V, VGS=0V, Tj=70
°C
-
126.5
155
VGS=10V, ID=2.3A
*RDS(ON)
-
130.0
175
m
Ω
VGS=5V, ID=2A
*GFS
-
7
-
S
VDS=5V, ID=2.3A
Dynamic
Ciss
-
1221
-
Coss
-
31
-
Crss
-
22
-
pF
VDS=25V
, VGS=0V, f=1MHz


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