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TIP31CJ3 Arkusz danych(PDF) 2 Page - Cystech Electonics Corp. |
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TIP31CJ3 Arkusz danych(HTML) 2 Page - Cystech Electonics Corp. |
2 / 6 page CYStech Electronics Corp. Spec. No. : C609J3 Issued Date : 2014.06.06 Revised Date : Page No. : 2/6 TIP31CJ3 CYStek Product Specification Absolute Maximum Ratings (Ta=25 °C) Parameter Symbol Limits Unit Collector-Base Voltage VCBO 200 V Collector-Emitter Voltage VCEO 100 V Emitter-Base Voltage VEBO 5 V Collector Current (DC) IC 3 Collector Current (Pulse) ICP 5 (Note 1) A Base Current IB 1 A Power Dissipation @ TA=25℃ PD 1.56 Power Dissipation @ TC=25℃ PD 15 W Thermal Resistance, Junction to Ambient RθJA 80 °C/W Thermal Resistance, Junction to Case RθJC 8.3 °C/W Operating Junction and Storage Temperature Range Tj ; Tstg -65~+150 °C Note : 1. Single Pulse , Pw≦300μs, Duty≦2%. Characteristics (Ta=25 °C) Symbol Min. Typ. Max. Unit Test Conditions *BVCEO(SUS) 100 - - V IC=30mA, IB=0 ICBO - - 100 nA VCB=200V, IC=0 ICEO - - 1 μA VCE=100V, IB=0 ICES - - 1 μA VCE=100V, VBE=0 IEBO - - 100 nA VEB=5V, IC=0 *VCE(sat) - - 0.5 V IC=3A, IB=375mA *VBE(on) - - 1.2 V VCE=4V, IC=3A *hFE 25 - - - VCE=4V, IC=1A *hFE 10 - 50 - VCE=4V, IC=3A fT 3 - - MHz VCE=10V, IC=500mA, f=1MHz *Pulse Test : Pulse Width ≤380μs, Duty Cycle≤2% Recommended soldering footprint |
Podobny numer części - TIP31CJ3 |
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Podobny opis - TIP31CJ3 |
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