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IRLML0100-23 Arkusz danych(PDF) 2 Page - Guangdong Kexin Industrial Co.,Ltd

Numer części IRLML0100-23
Szczegółowy opis  N-Channel MOSFET
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Producent  KEXIN [Guangdong Kexin Industrial Co.,Ltd]
Strona internetowa  http://www.kexin.com.cn/index.asp
Logo KEXIN - Guangdong Kexin Industrial Co.,Ltd

IRLML0100-23 Arkusz danych(HTML) 2 Page - Guangdong Kexin Industrial Co.,Ltd

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SMD Type
www.kexin.com.cn
2
MOSFET
N-Channel MOSFET
IRLML0100 (KRLML0100)
Electrical Characteristics Ta = 25℃
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Drain-Source Breakdown Voltage
VDSS
ID=250μA, VGS=0V
100
V
VDS=100V, VGS=0V
20
VDS=100V, VGS=0V, TJ=125℃
250
Gate-Body Leakage Current
IGSS
VDS=0V, VGS=±16V
±
100 nA
Gate Threshold Voltage
VGS(th)
VDS=VGS , ID=250μA
1
2.5
V
VGS=4.5V, ID=1.3A
190
235
VGS=10V, ID=1.6A
178
220
Forward Transconductance
gFS
VDS=50V, ID=1.6A
5.7
S
Input Capacitance
Ciss
290
Output Capacitance
Coss
27
Reverse Transfer Capacitance
Crss
13
Gate Resistance
Rg
1.3
Ω
Total Gate Charge
Qg
2.5
Gate Source Charge
Qgs
0.5
Gate Drain Charge
Qgd
1.2
Turn-On DelayTime
td(on)
2.2
Turn-On Rise Time
tr
2.1
Turn-Off DelayTime
td(off)
9
Turn-Off Fall Time
tf
3.6
Body Diode Reverse Recovery Time
trr
20
30
Body Diode Reverse Recovery Charge
Qrr
13
20
nC
Maximum Body-Diode Continuous Current
IS
1.1
Pulsed Source Current
ISM
(Note.2)
7
Diode Forward Voltage
VSD
IS=1.1A,VGS=0V,TJ = 25℃ (Note.1)
1.3
V
A
ns
Zero Gate Voltage Drain Current
IDSS
μ
A
VGS=4.5V, VDS=50V, ID=1A,RGEN=6.8Ω
RDS(On)
Static Drain-Source On-Resistance (Note.1)
VR=50V,IF= 1.1A, dI/dt= 100A/μs ,
TJ = 25℃ (Note.1)
VGS=0V, VDS=25V, f=1MHz
VGS=4.5V, VDS=50V, ID=1.6A
pF
nC
Note.1: Pulse width ≤ 400μs; duty cycle ≤ 2%.
Note.2:Repetitive rating; pulse width limited by max. junction temperature.
Marking
Marking
1K**


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