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IRF320 Arkusz danych(PDF) 1 Page - Intersil Corporation |
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IRF320 Arkusz danych(HTML) 1 Page - Intersil Corporation |
1 / 7 page 5-1 Semiconductor Features • 2.8A and 3.3A, 350V and 400V •rDS(ON) = 1.8Ω and 2.5Ω • Single Pulse Avalanche Energy Rated • SOA is Power Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics • High Input Impedance • Majority Carrier Device • Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Description These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching conver- tors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits. Formerly developmental type TA17404. Symbol Packaging JEDEC TO-204AA Ordering Information PART NUMBER PACKAGE BRAND IRF320 TO-204AA IRF320 IRF321 TO-204AA IRF321 IRF322 TO-204AA IRF322 IRF323 TO-204AA IRF323 NOTE: When ordering, use the entire part number. D S G DRAIN (FLANGE) SOURCE (PIN 2) GATE (PIN 1) July 1998 CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures. Copyright © Harris Corporation 1998 File Number 1569.3 IRF320, IRF321, IRF322, IRF323 2.8A and 3.3A, 350V and 400V, 1.8 and 2.5 Ohm, N-Channel Power MOSFETs |
Podobny numer części - IRF320 |
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Podobny opis - IRF320 |
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