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IRF323 Datasheet(Arkusz danych) 3 Page - Intersil Corporation

Numer części IRF323
Szczegółowy opis  2.8A and 3.3A, 350V and 400V, 1.8 and 2.5 Ohm, N-Channel Power MOSFETs
Pobierz  7 Pages
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Producent  INTERSIL [Intersil Corporation]
Strona internetowa  http://www.intersil.com/cda/home
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 3 page
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5-3
Input Capacitance
CISS
VDS = 25V, VGS = 0V, f = 1MHz
(Figure 11)
-
450
-
pF
Output Capacitance
COSS
-
100
-
pF
Reverse Transfer Capacitance
CRSS
-20
-
pF
Internal Drain Inductance
LD
Measured Between the
Contact Screw on the
Flange that is Closer to
Source and Gate Pins
and the Center of Die
Modified MOSFET
Symbol Showing the
Internal Devices
Inductances
-
5.0
-
nH
Internal Source Inductance
LS
Measured from the
Source Lead, 6mm
(0.25in) From the
Flange and the Source
Bonding Pad
-
12.5
-
nH
Thermal Resistance Junction to Case
RθJC
-
-
2.5
oC/W
Thermal Resistance Junction to Ambient
RθJA
Free Air Operation
-
-
30
oC/W
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Continuous Source to Drain Current
ISD
Modified MOSFET
Symbol Showing the
Integral Reverse P-N
Junction Diode
-
-
3.3
A
Pulse Source to Drain Current
(Note 3)
ISDM
-
-
13
A
Source to Drain Diode Voltage (Note 2)
VSD
TC = 25
oC, I
SD = 3.3A, VGS = 0V, (Figure 13)
-
-
1.8
V
Reverse Recovery Time
trr
TJ = 25
oC, I
SD = 3.3A, dISD/dt = 100A/µs
120
270
600
ns
Reverse Recovery Charge
QRR
TJ = 25
oC, I
SD = 3.3A, dISD/dt = 100A/µs
0.64
1.4
3.0
µC
NOTES:
2. Pulse test: pulse width
≤ 300µs, duty cycle ≤ 2%.
3. Repetitive rating: pulse width limited by Max junction temperature. See Transient Thermal Impedance curve (Figure 3).
4. VDD = 50V, starting TJ = 25
oC, L = 31mH, R
G = 25Ω, peak IAS = 3.3A. See Figures 15, 16.
Electrical Specifications
TC = 25
oC, Unless Otherwise Specified (Continued)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
LD
LS
D
S
G
D
S
G
IRF320, IRF321, IRF322, IRF323




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