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IRLML6402 Arkusz danych(PDF) 1 Page - Guangdong Kexin Industrial Co.,Ltd |
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IRLML6402 Arkusz danych(HTML) 1 Page - Guangdong Kexin Industrial Co.,Ltd |
1 / 6 page www.kexin.com.cn 1 SMD Type MOSFET ■ Features ● Ultra low on-resistance. ● P-Channel MOSFET. ● SOT-23 Footprint. ● Low profile(<1.1mm). ● Available in tape and reel. ● Fast switching. 0.4 +0.1 -0.1 2.9 +0.1 -0.1 0.95 +0.1 -0.1 1.9 +0.1 -0.1 1.Base 2.Emitter 3.collector 1 2 3 Unit: mm SOT-23 0.1 +0.05 -0.01 1. Gate 2. Source 3. Drain ■ Absolute Maximum Ratings Ta = 25℃ IRLML6402 (KRLML6402) Parameter Symbol Rating Unit Drain-Source Voltage VDS -20 Gate-Source Voltage VGS ± 12 Continuous Drain Current VGS=4.5V @ TA=25℃ -3.7 Continuous Drain Current VGS=4.5V@ TA=70℃ -2.2 Pulsed Drain Current a IDM -30 Power Dissipation @ TA=25℃ PD 1.3 Power Dissipation @ TA=70℃ 0.8 Single Pulse Avalanche Energy b EAS 11 mJ Thermal Resistance.Junction- to-Ambient RthJA 100 ℃ /W Linera Derating Factor 0.01 W/℃ Junction Temperature TJ 150 Junction and Storage Temperature Range Tstg -55 to 150 ℃ V ID A W P-Channel Enhancement MOSFET b.Starting TJ=25℃, L=1.65mH, RG=25Ω, IAS=-3.7A a.Repetitive Rating :Pulse width limited by maximum junction temperature Notes: |
Podobny numer części - IRLML6402 |
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Podobny opis - IRLML6402 |
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