IRF820 datasheet(4/7 Pages) INTERSIL

Numer części	IRF820

Szczegółowy opis	2.5A, 500V, 3.000 Ohm, N-Channel Power MOSFET

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Producent	INTERSIL [Intersil Corporation]

Strona internetowa	http://www.intersil.com/cda/home

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FIGURE 4. FORWARD BIAS SAFE OPERATING AREA

FIGURE 5. OUTPUT CHARACTERISTICS

FIGURE 6. SATURATION CHARACTERISTICS

FIGURE 7. TRANSFER CHARACTERISTICS

FIGURE 8. DRAIN TO SOURCE ON RESISTANCE vs GATE

VOLTAGE AND DRAIN CURRENT

FIGURE 9. NORMALIZED DRAIN TO SOURCE ON

RESISTANCE vs JUNCTION TEMPERATURE

Typical Performance Curves Unless Otherwise Speciﬁed (Continued)

VDS, DRAIN TO SOURCE VOLTAGE (V)

10

100

102

1

10

1

0.1

103

10

µs

100

µs

1ms

10ms

DC

SINGLE PULSE

TJ = MAX RATED

TC = 25

oC

OPERATION IN THIS AREA

IS LIMITED BY rDS(ON)

0

50

100

150

200

1

2

3

4

5

250

VDS, DRAIN TO SOURCE VOLTAGE (V)

0

VGS = 5.5V

VGS = 5.0V

VGS = 4.5V

VGS = 4.0V

VGS = 6.0V

VGS = 10V

PULSE DURATION = 80

µs

DUTY CYCLE = 0.5% MAX

0

1

0

4

812

20

2

3

VDS, DRAIN TO SOURCE VOLTAGE (V)

4

16

5

VGS = 5.0V

VGS = 4.0V

VGS = 4.5V

VGS = 5.5V

VGS = 6.0V

VGS = 10V

PULSE DURATION = 80

µs

DUTY CYCLE = 0.5% MAX

02468

VGS, GATE TO SOURCE VOLTAGE (V)

10

1

0.1

10-2

TJ = 150

oC

10

TJ = 25

oC

PULSE DURATION = 80

µs

DUTY CYCLE = 0.5% MAX

VDS ≥ 50V

ID, DRAIN CURRENT (A)

10

8

6

4

2

0

0246

810

VGS = 20V

VGS = 10V

PULSE DURATION = 80

µs

DUTY CYCLE = 0.5% MAX

3.0

1.8

1.2

0.6

0

-40

0

40

TJ, JUNCTION TEMPERATURE (

oC)

120

2.4

80

160

PULSE DURATION = 80

µs

DUTY CYCLE = 0.5% MAX

VGS = 10V, ID = 2.5A

IRF820

Podobny numer części - IRF820

Producent	Numer części	Arkusz danych	Szczegółowy opis
Motorola, Inc	IRF820	140Kb / 2P	N-CHANNEL Enhancement-Mode Silicon Gate TMOS
Vishay Siliconix	IRF820	156Kb / 8P	Power MOSFET 01-Jan-2022
STMicroelectronics	IRF820	92Kb / 8P	N - CHANNEL 500V - 2.5ohm - 2.5 A - TO-220 PowerMESH] MOSFET
Samsung semiconductor	IRF820	322Kb / 6P	N-CHANNEL POWER MOSFETS
Fairchild Semiconductor	IRF820	157Kb / 5P	N-Channel Power MOSFETs, 3.0 A, 450 V/500 V

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Podobny opis - IRF820

Producent	Numer części	Arkusz danych	Szczegółowy opis
Intersil Corporation	IRFR420	55Kb / 7P	2.5A, 500V, 3.000 Ohm, N-Channel Power MOSFETs
Intersil Corporation	IRFF420	326Kb / 7P	1.6A, 500V, 3.000 Ohm, N-Channel Power MOSFET
Fairchild Semiconductor	FDD3N50NZ	550Kb / 8P	N-Channel MOSFET 500V, 2.5A, 2.5?
Intersil Corporation	IRFF320	325Kb / 7P	2.5A, 400V, 1.800 Ohm, N-Channel Power MOSFET
	BUZ45B	42Kb / 5P	10A, 500V, 0.500 Ohm, N-Channel Power MOSFET October 1998
	IRF430	56Kb / 7P	4.5A, 500V, 1.500 Ohm, N-Channel Power MOSFET
	IRF840	56Kb / 7P	8A, 500V, 0.850 Ohm, N-Channel Power MOSFET
	BUZ42	41Kb / 5P	4A, 500V, 2.000 Ohm, N-Channel Power MOSFET October 1998
	IRFF430	325Kb / 7P	2.75A, 500V, 1.500 Ohm, N-Channel Power MOSFET
	BUZ41A	41Kb / 5P	4.5A, 500V, 1.500 Ohm, N-Channel Power MOSFET October 1998

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