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2SD2118 Arkusz danych(PDF) 1 Page - SeCoS Halbleitertechnologie GmbH |
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2SD2118 Arkusz danych(HTML) 1 Page - SeCoS Halbleitertechnologie GmbH |
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1 / 1 page 2SD2118 5A , 50V NPN Plastic Encapsulated Transistor Elektronische Bauelemente 18-Nov-2011 Rev. A Page 1 of 1 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 1 Base 3 Emitter Collector 2 RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES Low VCE(sat). VCE(sat) = 0.25V(Typ.) (IC/IB = 4A / 0.1A) Excellent DC Current Gain Characteristics CLASSIFICATION OF hFE Product-Rank 2SD2118-Q 2SD2118-R Range 120~270 180~390 PACKAGE INFORMATION Package MPQ Leader Size TO-252 2.5K 13 inch ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified) Parameter Symbol Ratings Unit Collector to Base Voltage VCBO 50 V Collector to Emitter Voltage VCEO 20 V Emitter to Base Voltage VEBO 6 V Collector Current -Continuous IC 5 A Collector Power Dissipation PC 1 W Junction and Storage Temperature Range TJ ,TSTG 150 , -55~150 °C ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted) Parameter Symbol Min. Typ. Max. Unit Test Conditions Collector-base breakdown voltage V(BR)CBO 50 - - V IC=50µA, IE=0 Collector-emitter breakdown voltage V(BR)CEO 20 - - V IC=1mA, IB=0 Emitter-base breakdown voltage V(BR)EBO 6 - - V IE=50µA, IC=0 Collector cut-off current ICBO - - 0.5 µ A VCB=40V, IE=0 Emitter cut-off current IEBO - - 0.5 µ A VEB=5V, IC=0 DC current gain hFE 120 - 390 VCE=2V, IC=500mA Collector-emitter saturation voltage VCE(sat) - - 1 V IC=4A, IB=100mA Transition frequency fT - 150 - MHz VCE=6V, IC=50mA, f=100MHz Collector Output Capacitance COB - 30 - pF VCB=20V, IE=0, f=1MHz A C D N O P G E F H K J M B D-Pack (TO-252) REF. Millimeter REF. Millimeter Min. Max. Min. Max. A 6.35 6.8 J 2.30 REF. B 5.20 5.50 K 0.64 0.90 C 2.15 2.40 M 0.50 1.1 D 0.45 0.58 N 0.9 1.65 E 6.8 7.5 O 0 0.15 F 2.40 3.0 P 0.43 0.58 G 5.40 6.25 H 0.64 1.20 |
Podobny numer części - 2SD2118_15 |
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Podobny opis - 2SD2118_15 |
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