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SI2303BDS-3 Arkusz danych(PDF) 4 Page - Guangdong Kexin Industrial Co.,Ltd

Numer części SI2303BDS-3
Szczegółowy opis  P-Channel Enhancement MOSFET
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Producent  KEXIN [Guangdong Kexin Industrial Co.,Ltd]
Strona internetowa  http://www.kexin.com.cn/index.asp
Logo KEXIN - Guangdong Kexin Industrial Co.,Ltd

SI2303BDS-3 Arkusz danych(HTML) 4 Page - Guangdong Kexin Industrial Co.,Ltd

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SMD Type
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4
MOSFET
.
P-Channel Enhancement MOSFET
SI2303BDS (KI2303BDS)
Typical Characterisitics
-0.6
-0.3
0.0
0.3
0.6
0.9
-50
-25
0
25
50
75
100
125
150
0.0
0.2
0.4
0.6
0.8
1.0
0
2
4
6
8
10
TJ = 150 C
e
g
a
tl
o
V
e
c
r
u
o
S
-
o
t-
e
t
a
G
.
s
v
e
c
n
a
t
s
i
s
e
R
-
n
O
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g
a
tl
o
V
d
r
a
w
r
o
F
e
d
o
i
D
n
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a
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D
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c
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S
r
e
w
o
P
e
s
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u
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e
l
g
n
i
S
e
g
a
tl
o
V
d
l
o
h
s
e
r
h
T
Square Wave Pulse Duration (sec)
VSD
V
)
V
(
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g
a
tl
o
V
n
i
a
r
D
-
o
t-
e
c
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S
-
GS - Gate-to-Source Voltage (V)
TJ - Temperature (
)
c
e
s
(
e
m
i
T
)
C
ID = 1.7 A
ID = 250 A
10
0.1
0
0.2
0.4
0.6
0.8
1.0
1.2
TJ = 25 C
1
TA = 25 C
Safe Operating Area, Junction-to-Case
VDS - Drain-to-Source Voltage (V)
100.0
1.0
0.1
1
10
100
0.01
10.0
0.1
Limited
by rDS(on)
TA = 25 C
Single Pulse
10 ms
100 ms
10 s
100 s
1 ms
dc, 100 s, 10 s, 1 s
10
8
6
4
2
0
0.01
0.1
1
10
100
1000


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