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SI2303BDS-3 Arkusz danych(PDF) 4 Page - Guangdong Kexin Industrial Co.,Ltd |
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SI2303BDS-3 Arkusz danych(HTML) 4 Page - Guangdong Kexin Industrial Co.,Ltd |
4 / 5 page SMD Type www.kexin.com.cn 4 MOSFET . P-Channel Enhancement MOSFET SI2303BDS (KI2303BDS) ■ Typical Characterisitics -0.6 -0.3 0.0 0.3 0.6 0.9 -50 -25 0 25 50 75 100 125 150 0.0 0.2 0.4 0.6 0.8 1.0 0 2 4 6 8 10 TJ = 150 C e g a tl o V e c r u o S - o t- e t a G . s v e c n a t s i s e R - n O e g a tl o V d r a w r o F e d o i D n i a r D - e c r u o S r e w o P e s l u P e l g n i S e g a tl o V d l o h s e r h T Square Wave Pulse Duration (sec) VSD V ) V ( e g a tl o V n i a r D - o t- e c r u o S - GS - Gate-to-Source Voltage (V) TJ - Temperature ( ) c e s ( e m i T ) C ID = 1.7 A ID = 250 A 10 0.1 0 0.2 0.4 0.6 0.8 1.0 1.2 TJ = 25 C 1 TA = 25 C Safe Operating Area, Junction-to-Case VDS - Drain-to-Source Voltage (V) 100.0 1.0 0.1 1 10 100 0.01 10.0 0.1 Limited by rDS(on) TA = 25 C Single Pulse 10 ms 100 ms 10 s 100 s 1 ms dc, 100 s, 10 s, 1 s 10 8 6 4 2 0 0.01 0.1 1 10 100 1000 |
Podobny numer części - SI2303BDS-3 |
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Podobny opis - SI2303BDS-3 |
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