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2SC1923 Arkusz danych(PDF) 1 Page - SeCoS Halbleitertechnologie GmbH |
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2SC1923 Arkusz danych(HTML) 1 Page - SeCoS Halbleitertechnologie GmbH |
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1 / 1 page Elektronische Bauelemente 2SC1923 0.02A , 40V NPN Plastic Encapsulated Transistor 19-Jun-2012 Rev. C Page 1 of 1 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. Base Emitter Collector RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES General purpose switching and amplification. CLASSIFICATION OF hFE Product-Rank 2SC1923-O 2SC1923-Y Range 70~140 100~200 MARKING ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified) Parameter Symbol Rating Unit Collector to Base Voltage VCBO 40 V Collector to Emitter Voltage VCEO 30 V Emitter to Base Voltage VEBO 4 V Collector Current - Continuous IC 20 mA Collector Power Dissipation PC 100 mW Thermal Resistance From Junction To Ambient RθJA 1250 °C / W Junction, Storage Temperature TJ, TSTG 150, -55~150 °C ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Test Conditions Collector to Base Breakdown Voltage V(BR)CBO 40 - - V IC=0.1mA, IE=0 Collector to Emitter Breakdown Voltage V(BR)CEO 30 - - V IC=1mA, IB=0 Emitter to Base Breakdown Voltage V(BR)EBO 4 - - V IE=0.1mA, IC=0 Collector Cut – Off Current ICBO - - 0.5 μA VCB=18V, IE=0 Emitter Cut – Off Current IEBO - - 0.5 μA VEB=4V, IC=0 DC Current Gain hFE 70 - 200 VCE=6V, IC=1mA Transition Frequency fT - 550 - MHz VCE=6V, IC=1mA Emitter Collector Base TO-92 A C E F D G H J B Millimeter Millimeter REF. Min. Max. REF. Min. Max. A 4.40 4.70 F 0.30 0.51 B 4.30 4.70 G 1.27 TYP. C 12.70 - H 1.10 1.40 D 3.30 3.81 J 2.42 2.66 E 0.36 0.56 K 0.36 0.76 C1923 Y 031 hFE Rank C1923 O 031 hFE Rank |
Podobny numer części - 2SC1923_15 |
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Podobny opis - 2SC1923_15 |
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