SI4558DY-HF datasheet(6/6 Pages) KEXIN

Numer części	SI4558DY-HF

Szczegółowy opis	Complementary Trench MOSFET

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MOSFET

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P-MOSFET Typical Characterisitics

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g

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D

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D

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T

Normalized Thermal Transient Impedance, Junction-to-Ambient

Square Wave Pulse Duration (sec)

VSD

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V

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–

GS – Gate-to-Source Voltage (V)

TJ – Temperature (

)

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s

(

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C

–0.6

–0.4

–0.2

–0.0

0.2

0.4

0.6

0.8

–50

0

50

100

150

0

0.02

0.04

0.06

0.08

0.10

0

2

4

6

8

10

TJ = 150 C

TJ = 25 C

2

1

0.1

0.01

ID = 6 A

ID = 250 A

0.4

0.6

10

0.8

1.0

1.2

1.4

1

10–3

10–2

1

10

30

10–1

10–4

1. Duty Cycle, D =

2. Per Unit Base = RthJA = 52。C/W

3. TJM – TA = PDMZthJA(t)

t1

t2

t1

t2

Notes:

4. Surface Mounted

PDM

0

8

16

24

32

40

0.01

0.1

1

10

30

Duty Cycle = 0.5

0.2

0.1

0.05

0.02

Single Pulse

30

0.2

0

。

Complementary Trench MOSFET

SI4558DY-HF (KI4558DY-HF)

Podobny numer części - SI4558DY-HF

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VBsemi Electronics Co.,...	SI4558DY-T1-E3	1Mb / 14P	N- and P-Channel 30 V (D-S) MOSFET

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Guangdong Kexin Industr...	AO4606	2Mb / 7P	Complementary Trench MOSFET
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SI4558DY-HF Arkusz danych(PDF) 6 Page - Guangdong Kexin Industrial Co.,Ltd

SI4558DY-HF Arkusz danych(HTML) 6 Page - Guangdong Kexin Industrial Co.,Ltd

Podobny numer części - SI4558DY-HF

Podobny opis - SI4558DY-HF

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