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RFD3055 Arkusz danych(PDF) 1 Page - Intersil Corporation |
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RFD3055 Arkusz danych(HTML) 1 Page - Intersil Corporation |
1 / 8 page 4-435 CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures. PSPICE® is a registered trademark of MicroSim Corporation. http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999 RFD3055, RFD3055SM, RFP3055 12A, 60V, 0.150 Ohm, N-Channel Power MOSFETs These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits. Formerly developmental type TA49082. Features • 12A, 60V •rDS(ON) = 0.150Ω • Temperature Compensating PSPICE® Model • Peak Current vs Pulse Width Curve • UIS Rating Curve • 175oC Operating Temperature • Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Symbol Packaging Ordering Information PART NUMBER PACKAGE BRAND RFD3055 TO-251AA FD3055 RFD3055SM TO-252AA FD3055 RFP3055 TO-220AB FP3055 NOTE: When ordering, use the entire part number. Add the suffix 9A, to obtain the TO-252AA variant in tape and reel, i.e. RFD3055SM9A. G D S JEDEC TO-251AA JEDEC TO-252AA JEDEC TO-220AB SOURCE DRAIN (FLANGE) GATE DRAIN GATE SOURCE DRAIN (FLANGE) GATE DRAIN (FLANGE) SOURCE DRAIN Data Sheet July 1999 File Number 3648.2 |
Podobny numer części - RFD3055 |
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Podobny opis - RFD3055 |
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