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RFD3055 Arkusz danych(PDF) 1 Page - Intersil Corporation

Numer części RFD3055
Szczegółowy opis  12A, 60V, 0.150 Ohm, N-Channel Power MOSFETs
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Producent  INTERSIL [Intersil Corporation]
Strona internetowa  http://www.intersil.com/cda/home
Logo INTERSIL - Intersil Corporation

RFD3055 Arkusz danych(HTML) 1 Page - Intersil Corporation

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CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
PSPICE® is a registered trademark of MicroSim Corporation.
http://www.intersil.com or 407-727-9207
| Copyright
© Intersil Corporation 1999
RFD3055, RFD3055SM, RFP3055
12A, 60V, 0.150 Ohm, N-Channel Power
MOSFETs
These are N-Channel enhancement mode silicon gate
power field effect transistors. They are advanced power
MOSFETs designed, tested, and guaranteed to withstand a
specified level of energy in the breakdown avalanche mode
of operation. All of these power MOSFETs are designed for
applications such as switching regulators, switching
convertors, motor drivers, relay drivers, and drivers for high
power bipolar switching transistors requiring high speed and
low gate drive power. These types can be operated directly
from integrated circuits.
Formerly developmental type TA49082.
Features
• 12A, 60V
•rDS(ON) = 0.150Ω
• Temperature Compensating PSPICE® Model
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• 175oC Operating Temperature
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
Packaging
Ordering Information
PART NUMBER
PACKAGE
BRAND
RFD3055
TO-251AA
FD3055
RFD3055SM
TO-252AA
FD3055
RFP3055
TO-220AB
FP3055
NOTE: When ordering, use the entire part number. Add the suffix 9A,
to obtain the TO-252AA variant in tape and reel, i.e. RFD3055SM9A.
G
D
S
JEDEC TO-251AA
JEDEC TO-252AA
JEDEC TO-220AB
SOURCE
DRAIN (FLANGE)
GATE
DRAIN
GATE
SOURCE
DRAIN (FLANGE)
GATE
DRAIN (FLANGE)
SOURCE
DRAIN
Data Sheet
July 1999
File Number
3648.2


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