 |
Zakładka z wyszukiwarką danych komponentów |
|
|
Zakładka z wyszukiwarką danych komponentów |
|
IRF530NS Arkusz danych(PDF) 7 Page - Kersemi Electronic Co., Ltd. |
|
||||||||||||||||||||||||||||||
IRF530NS Arkusz danych(HTML) 7 Page - Kersemi Electronic Co., Ltd. |
|
|
7 / 10 page  Peak Diode Recovery dv/dt Test Circuit P.W. Period di/dt Diode Recovery dv/dt Ripple ≤ 5% Body Diode Forward Drop Re-Applied Voltage Reverse Recovery Current Body Diode Forward Current VGS=10V VDD ISD Driver Gate Drive D.U.T. ISD Waveform D.U.T. VDS Waveform Inductor Curent D = P.W. Period + - + + + - - - RG VDD • dv/dt controlled by RG • ISD controlled by Duty Factor "D" • D.U.T. - Device Under Test D.U.T * Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer * Reverse Polarity of D.U.T for P-Channel VGS [ ] [ ] *** VGS = 5.0V for Logic Level and 3V Drive Devices [ ] *** Fig 14. For N-channel HEXFET® power MOSFETs IRF530NS/IRF530NL 2014-8-28 7 www.kersemi.com |
Podobny numer części - IRF530NS |
|
Podobny opis - IRF530NS |
|
|
|
Link URL |
| Polityka prywatności |
| ALLDATASHEET.PL |
| Czy Alldatasheet okazała się pomocna? [ DONATE ] |
O Alldatasheet | Reklama | Kontakt | Polityka prywatności | Linki | Lista producentów All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |
Polish ▼
English
Chinese
German
Japanese
Russian
Korean
Spanish
French
Italian
Portuguese
Polish
Vietnamese
Indian
Mexican
British
New Zealand
