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SD103CWS-V Arkusz danych(PDF) 1 Page - SUNMATE electronic Co., LTD |
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SD103CWS-V Arkusz danych(HTML) 1 Page - SUNMATE electronic Co., LTD |
1 / 2 page 2.0A Surface Mount Schottky Barrier Diodes and WEEE 2002/96/EC 1 of 2 Features Maximum Ratings and Electrical Characteristics @ TA = 25°C unless otherwise specified Mechanical Data · · · SD103A/B/CWS-V K L M J C H BA SOD-323 Dim Min Max A 0.25 0.35 B 1.20 1.40 C 2.30 2.70 H 1.60 1.80 J 0.00 0.10 K 1.0 1.1 L 0.20 0.40 M 0.10 0.15 α 0° 8° All Dimensions in mm • The SD103 series is a metal-on-silicon Schottky barrier device which is protected by a PN junction guard ring • This diode is also available in the Mini-MELF case with the type designations LL103A to LL103C, DO35 case with the type designations SD103A to SD103C and SOD123 case with type designations SD103AW-V to SD103CW-V • The low forward voltage drop and fast switching make it ideal for protection of MOS devices, steer- ing, biasing, and coupling diodes for fast switching and low logic level applications • For general purpose applications • Lead (Pb)-free component • Component in accordance to RoHS 2002/95/EC Case: SOD323 Plastic case Weight: approx. 4.3 mg Packaging Codes/Options: GS18/10 k per 13" reel (8 mm tape), 10 k/box GS08/3 k per 7" reel (8 mm tape), 15 k/box Parameter Test condition Part Symbol Value Unit Peak reverse voltage SD103AWS-V VRRM 40 V SD103BWS-V VRRM 30 V SD103CWS-V VRRM 20 V Power dissipation Ptot 2001) mW Single cycle surge 10 µs square wave IFSM 2A Parameter Test condition Part Symbol Min Typ. Max Unit Leakage current VR = 30 V SD103AWS-V IR 5µA VR = 20 V SD103BWS-V IR 5µA VR = 10 V SD103CWS-V IR 5µA Forward voltage drop IF = 20 mA VF 370 mV IF = 200 mA VF 600 mV Diode capacitance VR = 0 V, f = 1 MHz CD 50 pF Reverse recovery time IF = IR = 50 mA to 200 mA, recover to 0.1 IR trr 10 ns 1) Valid provided that electrodes are kept at ambient temperature |
Podobny numer części - SD103CWS-V |
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Podobny opis - SD103CWS-V |
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