IRF4905L datasheet(1/10 Pages) IRF

Numer części	IRF4905L

Szczegółowy opis	Power MOSFET(Vdss=-55V, Rds(on)=0.02ohm, Id=-74A)

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Producent	IRF [International Rectifier]

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IRF4905S/L

HEXFET® Power MOSFET

PD - 9.1478A

l Advanced Process Technology

l Surface Mount (IRF4905S)

l Low-profile through-hole (IRF4905L)

l 175°C Operating Temperature

l Fast Switching

l P-Channel

l Fully Avalanche Rated

8/25/97

S

D

G

Absolute Maximum Ratings

Fifth Generation HEXFETs from International Rectifier

utilize advanced processing techniques to achieve

extremely low

on-resistance per silicon area.

This

benefit, combined with the fast switching speed and

ruggedized device design that HEXFET Power MOSFETs

are well known for, provides the designer with an extremely

efficient and reliable device for use in a wide variety of

applications.

The D2Pak is a surface mount power package capable of

accommodating die sizes up to HEX-4. It provides the

highest power capability and the lowest possible on-

resistance in any existing surface mount package. The

D2Pak is suitable for high current applications because of

its low internal connection resistance and can dissipate

up to 2.0W in a typical surface mount application.

The through-hole version (IRF4905L) is available for low-

profile applications.

Description

VDSS = -55V

RDS(on) = 0.02Ω

ID = -74A

2

D

P a k

T O - 262

Parameter

Typ.

Max.

Units

RθJC

Junction-to-Case

–––

0.75

RθJA

Junction-to-Ambient ( PCB Mounted,steady-state)**

–––

40

Thermal Resistance

°C/W

Parameter

Max.

Units

ID @ TC = 25°C

Continuous Drain Current, VGS @ -10V

-74

ID @ TC = 100°C

Continuous Drain Current, VGS @ -10V

-52

A

IDM

Pulsed Drain Current

-260

PD @TA = 25°C

Power Dissipation

3.8

W

PD @TC = 25°C

Power Dissipation

200

W

Linear Derating Factor

1.3

W/°C

VGS

Gate-to-Source Voltage

± 20

V

EAS

Single Pulse Avalanche Energy

930

mJ

IAR

Avalanche Current

-38

A

EAR

Repetitive Avalanche Energy

20

mJ

dv/dt

Peak Diode Recovery dv/dt

-5.0

V/ns

TJ

Operating Junction and

-55 to + 175

TSTG

Storage Temperature Range

Soldering Temperature, for 10 seconds

300 (1.6mm from case )

°C

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