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IRF5210L Arkusz danych(PDF) 7 Page - International Rectifier

Numer części IRF5210L
Szczegółowy opis  Power MOSFET(Vdss=-100V, Rds(on)=0.06ohm, Id=-40A)
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Producent  IRF [International Rectifier]
Strona internetowa  http://www.irf.com
Logo IRF - International Rectifier

IRF5210L Arkusz danych(HTML) 7 Page - International Rectifier

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IRF5210S/L
Peak Diode Recovery dv/dt Test Circuit
P.W.
Period
di/dt
Diode Recovery
dv/dt
Ripple
≤ 5%
Body Diode
Forward Drop
Re-Applied
Voltage
Reverse
Recovery
Current
Body Diode Forward
Current
VGS=10V
VDD
ISD
Driver Gate Drive
D.U.T. ISD Waveform
D.U.T. VDS Waveform
Inductor Curent
D =
P.W.
Period
+
-
+
+
+
-
-
-
ƒ
„
‚
RG
VDD
• dv/dt controlled by R
G
• I
SD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
D.U.T
*
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer

* Reverse Polarity of D.U.T for P-Channel
VGS
[
]
[
]
*** VGS = 5.0V for Logic Level and 3V Drive Devices
[
] ***
Fig 14. For P-Channel HEXFETS


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