IRF5800 datasheet(1/8 Pages) IRF

Numer części	IRF5800

Szczegółowy opis	Power MOSFET(Vdss=-30V, Rds(on)=0.085ohm)

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Producent	IRF [International Rectifier]

Strona internetowa	http://www.irf.com

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Parameter

Max.

Units

VDS

Drain- Source Voltage

-30

V

ID @ TA = 25°C

Continuous Drain Current, VGS @ -4.5V

-4.0

ID @ TA= 70°C

Continuous Drain Current, VGS @ -4.5V

-3.2

A

IDM

Pulsed Drain Current

-32

PD @TA = 25°C

Power Dissipation

2.0

PD @TA = 70°C

Power Dissipation

1.3

Linear Derating Factor

0.016

W/°C

EAS

Single Pulse Avalanche Energy

20.6

mJ

VGS

Gate-to-Source Voltage

± 20

V

TJ, TSTG

Junction and Storage Temperature Range

-55 to + 150

°C

2/8/00

Parameter

Max.

Units

RθJA

Maximum Junction-to-Ambient

62.5

°C/W

Thermal Resistance

Absolute Maximum Ratings

W

www.irf.com

1

IRF5800

HEXFET® Power MOSFET

These P-channel MOSFETs from International Rectifier

utilize advanced processing techniques to achieve the

extremely low on-resistance per silicon area. This benefit

provides the designer with an extremely efficient device for

use in battery and load management applications.

The

TSOP-6

package with its customized leadframe

produces a HEXFET® power MOSFET with RDS(on) 60%

less than a similar size SOT-23. This package is ideal for

applications where printed circuit board space is at a

premium. It's unique thermal design and RDS(on) reduction

enables a current-handling increase of nearly 300%

compared to the SOT-23.

VDSS = -30V

RDS(on) = 0.085Ω

Description

l Ultra Low On-Resistance

l P-Channel MOSFET

l Surface Mount

l Available in Tape & Reel

l Low Gate Charge

T op V iew

1

2

D

G

A

D

S

3

4

5

6

PD - 93850

TSOP-6

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