 |
Zakładka z wyszukiwarką danych komponentów |
|
|
Zakładka z wyszukiwarką danych komponentów |
|
IRF5803 Arkusz danych(PDF) 2 Page - International Rectifier |
|
||||||||||||||||||||||||||||||
IRF5803 Arkusz danych(HTML) 2 Page - International Rectifier |
|
|
2 / 9 page  IRF5803 2 www.irf.com Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source Breakdown Voltage -40 ––– ––– VVGS = 0V, ID = -250µA ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.03 ––– V/°C Reference to 25°C, ID = -1mA ––– ––– 112 VGS = -10V, ID = -3.4 ––– ––– 190 VGS = -4.5V, ID = -2.7A VGS(th) Gate Threshold Voltage -1.0 ––– -3.0 V VDS = VGS, ID = -250µA gfs Forward Transconductance 4.0 ––– ––– SVDS = -10V, ID = -3.4A ––– ––– -10 VDS = -32V, VGS = 0V ––– ––– -25 VDS = -32V, VGS = 0V, TJ = 70°C Gate-to-Source Forward Leakage ––– ––– -100 VGS = -20V Gate-to-Source Reverse Leakage ––– ––– 100 VGS = 20V Qg Total Gate Charge ––– 25 37 ID = -3.4A Qgs Gate-to-Source Charge ––– 4.5 6.8 nC VDS = -20V Qgd Gate-to-Drain ("Miller") Charge ––– 3.5 5.3 VGS = -10V td(on) Turn-On Delay Time ––– 43 ––– VDD = -20V tr Rise Time ––– 550 ––– ID = -1.0A td(off) Turn-Off Delay Time ––– 88 ––– RG = 6.0Ω tf Fall Time ––– 50 ––– VGS = -10V Ciss Input Capacitance ––– 1110 ––– VGS = 0V Coss Output Capacitance ––– 93 ––– pF VDS = -25V Crss Reverse Transfer Capacitance ––– 73 ––– ƒ = 100kHz Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current MOSFET symbol (Body Diode) showing the ISM Pulsed Source Current integral reverse (Body Diode) p-n junction diode. VSD Diode Forward Voltage ––– ––– -1.2 V TJ = 25°C, IS = -2.0A, VGS = 0V trr Reverse Recovery Time ––– 27 40 ns TJ = 25°C, IF = -2.0A Qrr Reverse Recovery Charge ––– 34 50 nC di/dt = -100A/µs Source-Drain Ratings and Characteristics A -27 ––– ––– ––– -2.0 ––– S D G Repetitive rating; pulse width limited by max. junction temperature. Notes: Pulse width ≤ 400µs; duty cycle ≤ 2%. Electrical Characteristics @ TJ = 25°C (unless otherwise specified) IGSS µA m Ω RDS(on) Static Drain-to-Source On-Resistance IDSS Drain-to-Source Leakage Current nA ns Surface mounted on 1 in square Cu board |
Podobny numer części - IRF5803 |
|
Podobny opis - IRF5803 |
|
|
|
Link URL |
| Polityka prywatności |
| ALLDATASHEET.PL |
| Czy Alldatasheet okazała się pomocna? [ DONATE ] |
O Alldatasheet | Reklama | Kontakt | Polityka prywatności | Linki | Lista producentów All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |
Polish ▼
English
Chinese
German
Japanese
Russian
Korean
Spanish
French
Italian
Portuguese
Polish
Vietnamese
Indian
Mexican
British
New Zealand
