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IRF830 Arkusz danych(PDF) 1 Page - Kersemi Electronic Co., Ltd. |
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IRF830 Arkusz danych(HTML) 1 Page - Kersemi Electronic Co., Ltd. |
1 / 7 page Power MOSFET IRF830 FEATURES • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Fast Switching • Ease of Paralleling • Simple Drive Requirements • Lead (Pb)-free Available DESCRIPTION The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry. Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. VDD = 50 V, starting TJ = 25 °C, L = 24 mH, RG = 25 Ω, IAS = 4.5 A (see fig. 12). c. ISD ≤ 4.5 A, dI/dt ≤ 75 A/µs, VDD ≤ VDS, TJ ≤ 150 °C. d. 1.6 mm from case. PRODUCT SUMMARY VDS (V) 500 RDS(on) (Ω)VGS = 10 V 1.5 Qg (Max.) (nC) 38 Qgs (nC) 5.0 Qgd (nC) 22 Configuration Single N-Channel MOSFET G D S TO-220 ORDERING INFORMATION Package TO-220 Lead (Pb)-free IRF830PbF SiHF830-E3 SnPb IRF830 SiHF830 ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage VDS 500 V Gate-Source Voltage VGS ± 20 Continuous Drain Current VGS at 10 V TC = 25 °C ID 4.5 A TC = 100 °C 2.9 Pulsed Drain Currenta IDM 18 Linear Derating Factor 0.59 W/°C Single Pulse Avalanche Energyb EAS 280 mJ Repetitive Avalanche Currenta IAR 4.5 A Repetitive Avalanche Energya EAR 7.4 mJ Maximum Power Dissipation TC = 25 °C PD 74 W Peak Diode Recovery dV/dtc dV/dt 3.5 V/ns Operating Junction and Storage Temperature Range TJ, Tstg - 55 to + 150 °C Soldering Recommendations (Peak Temperature) for 10 s 300d Mounting Torque 6-32 or M3 screw 10 lbf · in 1.1 N · m 2014-8-9 1 www.kersemi.com |
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