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IRFB4212 Arkusz danych(PDF) 2 Page - Kersemi Electronic Co., Ltd. |
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IRFB4212 Arkusz danych(HTML) 2 Page - Kersemi Electronic Co., Ltd. |
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2 / 7 page  S D G Repetitive rating; pulse width limited by max. junction temperature. Starting TJ = 25°C, L = 0.32mH, RG = 25Ω, IAS = 13A. Pulse width ≤ 400µs; duty cycle ≤ 2%. Notes: Rθ is measured at TJ of approximately 90°C.
Limited by Tjmax. See Figs. 14, 15, 17a, 17b for repetitive avalanche information Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units BVDSS Drain-to-Source Breakdown Voltage 100 ––– ––– V ∆ΒVDSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.09 ––– V/°C RDS(on) Static Drain-to-Source On-Resistance ––– 58 72.5 m Ω VGS(th) Gate Threshold Voltage 3.0 ––– 5.0 V ∆VGS(th)/∆TJ Gate Threshold Voltage Coefficient ––– -13 ––– mV/°C IDSS Drain-to-Source Leakage Current ––– ––– 20 µA ––– ––– 250 IGSS Gate-to-Source Forward Leakage ––– ––– 200 nA Gate-to-Source Reverse Leakage ––– ––– -200 gfs Forward Transconductance 11 ––– ––– S Qg Total Gate Charge ––– 15 23 Qgs1 Pre-Vth Gate-to-Source Charge ––– 3.3 ––– Qgs2 Post-Vth Gate-to-Source Charge ––– 1.4 ––– nC Qgd Gate-to-Drain Charge ––– 6.9 ––– Qgodr Gate Charge Overdrive ––– 3.4 ––– See Fig. 6 and 19 Qsw Switch Charge (Qgs2 + Qgd) ––– 8.3 ––– RG(int) Internal Gate Resistance ––– 2.2 ––– Ω td(on) Turn-On Delay Time ––– 7.7 ––– tr Rise Time ––– 28 ––– td(off) Turn-Off Delay Time ––– 14 ––– ns tf Fall Time ––– 3.9 ––– Ciss Input Capacitance ––– 550 ––– Coss Output Capacitance ––– 66 ––– pF Crss Reverse Transfer Capacitance ––– 35 ––– Coss Effective Output Capacitance ––– 350 ––– LD Internal Drain Inductance ––– 4.5 ––– Between lead, nH 6mm (0.25in.) LS Internal Source Inductance ––– 7.5 ––– from package Avalanche Characteristics Parameter Units EAS Single Pulse Avalanche Energy d mJ IAR Avalanche Current Ãg A EAR Repetitive Avalanche Energy g mJ Diode Characteristics Parameter Min. Typ. Max. Units IS @ TC = 25°C Continuous Source Current ––– ––– 18 (Body Diode) A ISM Pulsed Source Current ––– ––– 57 (Body Diode) Ã VSD Diode Forward Voltage ––– ––– 1.3 V trr Reverse Recovery Time ––– 41 62 ns Qrr Reverse Recovery Charge ––– 69 100 nC MOSFET symbol RG = 2.5Ω VDS = 50V, ID = 13A Conditions and center of die contact VDD = 50V, VGS = 10VÃe VDS = 80V VDS = 50V VDS = VGS, ID = 250µA VDS = 100V, VGS = 0V VGS = 0V, VDS = 0V to 80V VDS = 100V, VGS = 0V, TJ = 125°C VGS = 20V VGS = -20V VGS = 10V ID = 13A VGS = 0V Conditions VGS = 0V, ID = 250µA Reference to 25°C, ID = 1mA VGS = 10V, ID = 13A e TJ = 25°C, IF = 13A di/dt = 100A/µs e TJ = 25°C, IS = 13A, VGS = 0V e showing the integral reverse p-n junction diode. ID = 13A Typ. Max. ƒ = 1.0MHz, See Fig.5 ––– 25 See Fig. 14, 15, 17a, 17b IRFB4212PBF 2014-8-9 2 www.kersemi.com |
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