IRF630NS datasheet(4/11 Pages) IRF

Numer części	IRF630NS

Szczegółowy opis	Power MOSFET(Vdss=200V, Rds(on)=0.30ohm, Id=9.3A)

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Producent	IRF [International Rectifier]

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IRF630N/S/L

Fig 7. Typical Source-Drain Diode

Forward Voltage

Fig 5. Typical Capacitance Vs.

Drain-to-Source Voltage

Fig 6. Typical Gate Charge Vs.

Gate-to-Source Voltage

0.1

1

10

100

1000

1

10

100

1000

OPERATION IN THIS AREA LIMITED

BY RDS(on)

Single Pulse

T

= 175 C

= 25 C

°

J

C

V

, Drain-to-Source Voltage (V)

DS

10us

100us

1ms

10ms

Fig 7. Typical Source-Drain Diode

Forward Voltage

Fig 8. Maximum Safe Operating Area

Fig 6. Typical Gate Charge Vs.

Gate-to-Source Voltage

1

10

100

1000

VDS, Drain-to-Source Voltage (V)

0

200

400

600

800

1000

1200

Coss

Crss

Ciss

VGS = 0V,

f = 1 MHZ

Ciss = Cgs+ Cgd, Cds SHORTED

Crss = Cgd

Coss = Cds+ Cgd

0

5

10

15

20

25

30

0

4

8

12

16

Q , Total Gate Charge (nC)

G

I =

D

5.4A

V

= 40V

DS

V

= 100V

DS

V

= 160V

DS

0.1

1

10

100

0.2

0.4

0.6

0.8

1.0

1.2

V

,Source-to-Drain Voltage (V)

SD

V

= 0 V

GS

T = 25 C

J

°

T = 175 C

J

°

Podobny numer części - IRF630NS

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Podobny opis - IRF630NS

Producent	Numer części	Arkusz danych	Szczegółowy opis
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	IRFI9640G	169Kb / 6P	Power MOSFET(Vdss=-200V, Rds(on)=0.50ohm, Id=-6.1A)
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